Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor.
The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.
Many nonvolatile memory devices such as, ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM), ovonic universal memory (OUM), and resistive random access memory (RRAM) were considerable discussed and investigated. For these nonvolatile memory devices, the RRAM devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The RRAM devices were only consist of one resistor and one corresponding transistor. In this study, the CuO thin films deposited on ITO/glass and Pt/Ti/SiO2/Si substrates for applications in RRAM devices were produced and investigated. The optimal sputtering conditions of as-deposited CuO thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. The electrical and physics properties of CuO thin films for applications in RRAM devices were discussed.
The structure and electrical characteristics of the lead-free Lix(K0.5Na0.5)1-x(Nb0.8Ta0.2)O3 (x=0~0.05) piezoelectric ceramics for the conventional solid-state reaction method and the B-side pre-calcined method were achieved and compared. For the B-side pre-calcined method, the lead-free ceramic material exhibited the excellent electrical and piezoelectric properties. The relative dielectric constant (εr) and loss (tan δ) of the Lix(K0.5Na0.5)1-x(Nb0.8Ta0.2)O3 for x=0.03 using the B-side pre-calcined method were 1223 and 0.021, respectively. In addition, the electromechanical coupling factors (kp) and Curie temperature (Tc) was 48.5 % and 315°C. Finally, the electrical properties of the lead-free Lix(K0.5Na0.5)1-x(Nb0.8Ta0.2)O3(x=0~0.05) homogeneity ceramics improved by the B-side pre-calcined method were also investigated and discussed.
Lead-free potassium sodium niobate ceramic thin films were synthesized using rf magnetron sputtering technology for MFIS structures. The optimal sputtering parameters of the as-deposited KNN thin films for depositing times of 1h were obtained. Regarding the measured physical properties, the micro-structure and thickness of as-deposited KNN thin films for different oxygen concentration were obtained and compared by XRD patterns and SEM images. The surface roughness of KNN thin film was also observed by AFM morphology. The average grain size and root mean square roughness were 250 and 7.04 nm, respectively.
For KNN thin films in the MFIS structure, the capacitance and leakage current density were 280 pF and 10-8A/cm2, respectively. We investigated that the leakage current density and the memory window increased, the capacitance critically increased as the oxygen concentration increased from 0 to 40%. However, the excess oxygen concentration process was decreased the electrical and physical of as-deposited KNN thin film. The effect of oxygen concentration on the physical and electrical characteristics of KNN thin films was investigated and determined.
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