Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

Abstract

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Resistive switching properties of manganese oxide nanoparticles with hexagonal shape

“…The typical resistive switching behaviors of complex materials such as Pr 0.7 Ca 0.3 MnO 3 , Mn-doped ZnO x S 1−x , and Mn-doped ZnO were intensively investigated [6,8,9]. In addition, the electrical conduction and resistive switching properties of manganese oxide thin films have been studied [10][11][12][13][14]. In contrast to the deposition process of thin film, the deposition of nanoparticles is a low-temperature and solution-based process.…”