Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none of these structures were fully integrated on silicon wafers and using a MOSFET fabrication process. We present for the first time the integration of a PVDF-TrFE (70%-30%) layer into a standard n-MOS transistor through a quasi-standard semiconductor technology. This allows us to achieve a Non Volatile Memory cell and at the same time to compact capacitor-transistor ferroelectric cell into a one-transistor memory cell.
Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self‐assembling bottom‐up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom‐up self‐assembly is extended to a new approach using a mixture containing a 2Dlayer‐by‐layer film growth, followed by a 3D VAN film growth. In this work, the two‐phase nanocomposite thin films are based on LaAlO3:LaBO3, grown on a lattice‐mismatched SrTiO3001 (001) single crystal. The 2D‐to‐3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.
some electrical equipment tests are destructive tests. These tests check the behavior of the equipment during the transients of currents and voltages. Frequently, the time interval of the test is several tens or hundreds milliseconds. The human observer cannot analyze the parameters of interest that characterize the evolution of equipment. Therefore, the computer assisted transient recorders are used to store the sampled values of the measuring signals generated by the transducers integrated in test assembly. The analysis and measurement of recorded quantity are made off-line using transient waveforms and user defined special functions. The paper presents a method to determine the uncertainty in off-line measurement of the electric power and energy, based on recorded data during the destructive tests.
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