Polycrystalline silicon thin films for microsystems: correlation between technological parameters, film structure and electrical properties

Faceting of twin grain boundaries in polysilicon films

“…Polycrystalline silicon films are widely used in integrated circuit technology (IC) as a gate electrode material for metal‐oxide‐semiconductor (MOS) devices, load resistors, interconnects, as a material for solar cells, and other applications. As is known 1–5, the film structure determines significantly their mechanical, optical, and electrical properties. In particular, the characteristics of the electronic devices that are fabricated from polycrystalline silicon are directly connected with the structural properties of their grain boundaries (GB) 2–5.…”

“…As is known 1–5, the film structure determines significantly their mechanical, optical, and electrical properties. In particular, the characteristics of the electronic devices that are fabricated from polycrystalline silicon are directly connected with the structural properties of their grain boundaries (GB) 2–5. Some GB in polysilicon films are faceted.…”