Faceting of twin grain boundaries in polysilicon films

Nakhodkin, N.G.; Кulish, N. P.; Rodionova, T. V.

doi:10.1002/pssa.200824482

Cited by 7 publications

(8 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Upon cooling below the roughening temperature, the facet appears again but with a certain hysteresis of about 5 K [125]. The CSL facets forming first-order ridge with each other or with rough GB portions were observed not only in metals, but also in polysilicon [126,127], GaN [128], PbTe [129], WC [130] and texturally equilibrated rocks [131].…”

Section: Faceting-roughening Of First and Second Ordersmentioning

confidence: 94%

“…If all GBs have a rough structure, then a nearly isotropic normal grain growth occurs. The abnormal grain growth is observed to occur when all or a fraction of the GBs are faceted [126,160,[173][174][175][176][177][178][179][180][181][182][183][184]. Below follows the detailed discussion of the works [126,160,[173][174][175][176][177][178][179][180][181][182][183][184].…”

Section: Faceting-roughening Of Low-angle Grain Boundariesmentioning

confidence: 99%

See 1 more Smart Citation

Review: grain boundary faceting–roughening phenomena

et al. 2015

View full text Add to dashboard Cite

Similar to free surfaces, the grain boundaries (GBs) in metals, semiconductors and insulators can contain flat (faceted) and curved (rough) portions. In the majority of cases, facets are parallel to the most densely packed planes of coincidence sites lattice formed by two lattices of abutting grains. Facets disappear with the increasing temperature (faceting-roughening transition) and the increasing angular distance from coincidence misorientation. The temperature of GB faceting-roughening transition T R decreases with the increasing inverse density of coincidence sites R. In case of fixed R, T R decreases with the decreasing density of coincidence sites in the GB plane.The intersection line (ridge) between facets or between facets and curved (rough) portions of surfaces can be of first order (two different tangents in the contact point) or of second order (common tangent, continuous transitions). The rough (curved) portions of GB can also form the firstorder rough-to-rough ridges (with two tangents). GB facets control the transition from normal to abnormal grain growth and strongly influence the GB migration, diffusion, wetting, fracture and electrical conductivity.

show abstract

Section: Faceting-roughening Of First and Second Ordersmentioning

confidence: 94%

Section: Faceting-roughening Of Low-angle Grain Boundariesmentioning

confidence: 99%

Review: grain boundary faceting–roughening phenomena

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Nanocrystalline silicon, or simply nanosilicon, is widely used in modern integrated electronics [1,2] and as a promising material for solar cells [3,4]. It is known that the physical properties of silicon films strongly depend on the conditions of their growth and internal parameters.…”

Section: Introductionmentioning

confidence: 99%

“…In other words, the conditions of growth of the nanocrystalline silicon films can affect notably their internal structure. On the other hand, the grain size determines the electrical properties of the films, because the grain boundaries are potential barriers for carriers [1,3]. The recent AFM-studies [10] have demonstrated that the grain size depends on the thickness of deposited films: the films with the thicknesses less than 50 nm contain the grains with the average size 25-30 nm, while the films thicker than 50 nm contain the grains as large as 180-200 nm.…”

Section: Introductionmentioning

confidence: 99%

Ellipsometric studies of nanocrystalline silicon films with the thicknesses less than 100 nm

Buchenko¹,

Goloborodko²

2016

Ukr. J. Phys. Opt.

View full text Add to dashboard Cite

Our study deals with the structure of thin nanosilicon films having the thicknesses less than 100 nm. It is measured using multi-angular and spectral ellipsometry methods. Modelling of angular dependences of the ellipsometric parameters shows a significant dependence of both structure and composition of the nanosilicon films upon their thickness. In particular, the volume fraction of voids increases with decreasing thickness of the film. The effect of SiO x shell of the nanocrystals on the optical properties of our films can be neglected. When the thickness of the nanocrystalline layer is less than 50 nm, the compositions of this layer and the surface-roughness layer become practically identical.

show abstract

“…The structure of silicon films, depending on deposition conditions and subsequent technological treatments, was studied in works [5][6][7][8][9][10][11][12][13][14] in detail. Various structural modifications of the films were revealednamely, equiaxial, fibrous, and dendritic -and conditions of their existence were determined [5].…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Surface Evolution during the Growth of Undoped Nanosilicon Films

2015

View full text Add to dashboard Cite

The thickness dependence of the surface roughness and the grain size of nanosilicon films, produced by low-pressure chemical vapour deposition, has been found, by using atomic force microscopy. A correlation between the surface roughness, grain size, and transformation of a film structure from the equiaxial structure into a fibrous one is established. Possible mechanisms of surface evolution are analyzed. K e y w o r d s: nanosilicon films, surface roughness, grain growth, mechanism of grain growth, atomic force microscopy.

show abstract

Faceting of twin grain boundaries in polysilicon films

Cited by 7 publications

References 32 publications

Review: grain boundary faceting–roughening phenomena

Review: grain boundary faceting–roughening phenomena

Ellipsometric studies of nanocrystalline silicon films with the thicknesses less than 100 nm

Mechanisms of Surface Evolution during the Growth of Undoped Nanosilicon Films

Contact Info

Product

Resources

About