Sol-gel is one of the most attractive techniques for production of silica-on-silicon integrated optical devices. In fact, it combines low cost with flexibility and ease of doping; thus, nonlinear and active compounds can be effectively included in the silica matrix. Here, the feasibility of applying the sol-gel technique to the realization of an erbium-doped optical amplifier is reported on, operating in the third telecommunication window. In particular, the development of an optimum strategy for the design and fabrication of a guiding structure in the strip-loaded configuration is described. Design optimization results, as well as fabrication results and measured characteristics, are described and discussed.
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