Electromagnetic phased arrays at radio frequencies are well known and have enabled applications ranging from communications to radar, broadcasting and astronomy. The ability to generate arbitrary radiation patterns with large-scale phased arrays has long been pursued. Although it is extremely expensive and cumbersome to deploy large-scale radiofrequency phased arrays, optical phased arrays have a unique advantage in that the much shorter optical wavelength holds promise for large-scale integration. However, the short optical wavelength also imposes stringent requirements on fabrication. As a consequence, although optical phased arrays have been studied with various platforms and recently with chip-scale nanophotonics, all of the demonstrations so far are restricted to one-dimensional or small-scale two-dimensional arrays. Here we report the demonstration of a large-scale two-dimensional nanophotonic phased array (NPA), in which 64 × 64 (4,096) optical nanoantennas are densely integrated on a silicon chip within a footprint of 576 μm × 576 μm with all of the nanoantennas precisely balanced in power and aligned in phase to generate a designed, sophisticated radiation pattern in the far field. We also show that active phase tunability can be realized in the proposed NPA by demonstrating dynamic beam steering and shaping with an 8 × 8 array. This work demonstrates that a robust design, together with state-of-the-art complementary metal-oxide-semiconductor technology, allows large-scale NPAs to be implemented on compact and inexpensive nanophotonic chips. In turn, this enables arbitrary radiation pattern generation using NPAs and therefore extends the functionalities of phased arrays beyond conventional beam focusing and steering, opening up possibilities for large-scale deployment in applications such as communication, laser detection and ranging, three-dimensional holography and biomedical sciences, to name just a few.

Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters and detectors) consume too much power for the high-speed femtojoule-class links that ultimately will be required. Here we demonstrate and characterize the first modulator to achieve simultaneous high-speed (25 Gb s−1), low-voltage (0.5 VPP) and efficient 0.9 fJ per bit error-free operation. This low-energy high-speed operation is enabled by a record electro-optic response, obtained in a vertical p–n junction device that at 250 pm V−1 (30 GHz V−1) is up to 10 times larger than prior demonstrations. In addition, this record electro-optic response is used to compensate for thermal drift over a 7.5 °C temperature range with little additional energy consumption (0.24 fJ per bit for a total energy consumption below 1.03 J per bit). The combined results of highly efficient modulation and electro-optic thermal compensation represent a new paradigm in modulator development and a major step towards single-digit femtojoule-class communications.

We present, to the best of our knowledge, the first demonstration of coherent solid-state light detection and ranging (LIDAR) using optical phased arrays in a silicon photonics platform. An integrated transmitting and receiving frequency-modulated continuous-wave circuit was initially developed and tested to confirm on-chip ranging. Simultaneous distance and velocity measurements were performed using triangular frequency modulation. Transmitting and receiving optical phased arrays were added to the system for on-chip beam collimation, and solid-state beam steering and ranging measurements using this system are shown. A cascaded optical phase shifter architecture with multiple groups was used to simplify system control and allow for a compact packaged device. This system was fabricated within a 300 mm wafer CMOS-compatible platform and paves the way for disruptive low-cost and compact LIDAR on-chip technology.

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The demand for nonlinear effects within a silicon platform to support photonic circuits requiring phase-only modulation, frequency doubling, and/or difference frequency generation, is becoming increasingly clear. However, the symmetry of the silicon crystal inhibits second order optical nonlinear susceptibility, χ (2) . Here, we show that the crystalline symmetry is broken when a DC field is present, inducing a χ (2) in a silicon waveguide that is proportional to the large χ (3) of silicon. First, Mach-Zehnder interferometers using the DC Kerr effect optical phase shifters in silicon ridge waveguides with p-i-n junctions are demonstrated with a V π L of 2.4Vcm in telecom bands (λ ω =1.58µm) without requiring to dope the silicon core. Second, the pump and second harmonic modes in silicon ridge waveguides are quasi-phase matched when the magnitude, spatial distribution of the DC field and χ (2) are controlled with p-i-n junctions. Using these waveguides, second harmonic generation at multiple pump wavelengths are observed with a maximum efficiency of P 2ω /Pω 2 =12%/W at λ ω =2.29µm in a 1mm long waveguide. This corresponds to a fieldinduced χ (2) =41pm/V, comparable to non-centrosymmetric media (LiNbO 3, GaAs, GaN).The field-induced nonlinear silicon photonics will lead to a new class of CMOS compatible integrated devices spanning from near to mid infrared spectrum.

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Vertical junction resonant microdisk modulators and switches have been demonstrated with exceptionally low power consumption, low-voltage operation, high-speed, and compact size. This paper reviews the progress of vertical junction microdisk modulators, provides detailed design data, and compares vertical junction performance to lateral junction performance. The use of a vertical junction maximizes the overlap of the depletion region with the optical mode thereby minimizing both the drive voltage and power consumption of a depletion-mode modulator. Further, the vertical junction enables contact to be made from the interior of the resonator and therein a hard outer wall to be formed that minimizes radiation in small diameter resonators, further reducing the capacitance and drive power of the modulator. Initial simple vertical junction modulators using depletion-mode operation demonstrated the first sub-100 fJ/bit silicon modulators. With more intricate doping schemes and through the use of AC-coupled drive signals, 3.5 μm diameter vertical junction microdisk modulators have recently achieved a communications efficiency of 3 fJ/bit, making these modulators the smallest and lowest power modulators demonstrated to date, in any material system. Additionally, the demonstration was performed at 12.5 Gb/s, required a peak-to-peak signal level of only 1 V, and achieved bit-error-rates below 10(-12) without requiring signal pre-emphasis. As an additional benefit to the use of interior contacts, higher-order active filters can be constructed from multiple vertical-junction modulators without interference of the electrodes. Doing so, we demonstrated second-order active high-speed bandpass switches with ~2.5 ns switching speeds, and power penalties of only 0.4 dB. Through the use of vertical junctions in resonant modulators, we have achieved the lowest power consumption, lowest voltage, and smallest silicon modulators demonstrated to date.

In this Letter, we propose and demonstrate a high-speed and power-efficient thermo-optic switch using an adiabatic bend with a directly integrated silicon heater to minimize the heat capacity and therein maximize the performance of the thermo-optic switch. A rapid, τ=2.4 μs thermal time constant and a low electrical power consumption of P(π)=12.7 mW/π-phase shift were demonstrated representing a P(π)τ product of only 30.5 mW·μs in a compact device with a phase shifter of only ~10 μm long.