We report on DNA translocations through nanopores created in graphene membranes. Devices consist of 1-5 nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter. Due to the thin nature of the graphene membranes, we observe larger blocked currents than for traditional solid-state nanopores. However, ionic current noise levels are several orders of magnitude larger than those for silicon nitride nanopores. These fluctuations are reduced with the atomic-layer deposition of 5 nm of titanium dioxide over the device. Unlike traditional solid-state nanopore materials that are insulating, graphene is an excellent electrical conductor. Use of graphene as a membrane material opens the door to a new class of nanopore devices in which electronic sensing and control are performed directly at the pore.

We demonstrate high-resolution modification of suspended multi-layer graphene sheets by controlled exposure to the focused electron beam of a transmission electron microscope. We show that this technique can be used to realize, on timescales of a few seconds, a variety of features, including nanometer-scale pores, slits, and gaps that are stable and do not evolve over time. Despite the extreme thinness of the suspended graphene sheets, extensive removal of material to produce the desired feature geometries is found to not introduce long-range distortion of the suspended sheet structure

We show that a high-resolution transmission electron microscope can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. Fabricated devices include nanogaps, nanodiscs, nanorings, nanochannels, and nanowires with tailored curvatures and multi-terminal nanogap devices with nanoislands or nanoholes between the terminals. The high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and nanofluidics.

Local electric fields generated by nanopatterned electrodes were used to control the position and orientation of well-isolated as well as closely packed colloidal semiconducting CdTe and CdSe nanorods (NRs) drop-cast from solution. Postdeposition imaging using transmission-electron microscopy and atomic-force microscopy revealed strong NR alignment to the direction of the applied field and dense accumulation around and onto voltage-biased electrodes when deposited from dilute and concentrated solutions, respectively. The degree of alignment under the applied electric field is characterized by a nematic order parameter S approximately 0.8 in contrast to the zero-field case when S approximately 0.1.

Electromigrated nanogaps have shown great promise for use in molecular scale electronics. We have fabricated nanogaps on free-standing transparent SiN(x) membranes which permit the use of transmission electron microscopy (TEM) to image the gaps. The electrodes are formed by extending a recently developed controlled electromigration procedure and yield a nanogap with approximately 5 nm separation clear of any apparent debris. The gaps are stable, on the order of hours as measured by TEM, but over time (months) relax to about 20 nm separation determined by the surface energy of the Au electrodes. A major benefit of electromigrated nanogaps on SiN(x) membranes is that the junction pinches in away from residual metal left from the Au deposition which could act as a parasitic conductance path. This work has implications to the design of clean metallic electrodes for use in nanoscale devices where the precise geometry of the electrode is important.