Polymeric sensors on fabrics have vast potential toward the development of versatile applications, particularly when the ready-made wearable or fabric can be directly coated. However, traditional coating approaches, such as solution-based methods, have limitations in achieving uniform and thin films because of the poor surface wettability of fabrics. Herein, to realize a uniform poly(3,4-ethylenedioxythiophene) (PEDOT) layer on various everyday fabrics, we use oxidative chemical vapor deposition (oCVD). The oCVD technique is a unique method capable of forming patterned polymer films with controllable thicknesses while maintaining the inherent advantages of fabrics, such as exceptional mechanical stability and breathability. Utilizing the superior characteristics of oCVD PEDOT, we succeed in fabricating blood pressure-and respiratory rate-monitoring sensors by directly depositing and patterning PEDOT on commercially available disposable gloves and masks, respectively. Those results are expected to pave efficient and facile ways for skin-compatible and affordable sensors for personal health care monitoring.
The fabrication of oxide-based p−n heterojunctions that exhibit high rectification performance has been difficult to realize using standard manufacturing techniques that feature mild vacuum requirements, low thermal budget processing, and scalability. Critical bottlenecks in the fabrication of these heterojunctions include the narrow processing window of p-type oxides and the charge-blocking performance across the metallurgical junction required for achieving low reverse current and hence high rectification behavior. The overarching goal of the present study is to demonstrate a simple processing route to fabricate oxide-based p−n heterojunctions that demonstrate high on/off rectification behavior, a low saturation current, and a small turn-on voltage. For this study, room-temperature sputter-deposited p-SnO x and n-InGaZnO (IGZO) films were chosen. SnO x is a promising p-type oxide material due to its monocationic system that limits complexities related to processing and properties, compared to other multicationic oxide materials. For the n-type oxide, IGZO is selected due to the knowledge that postprocessing annealing critically reduces the defect and trap densities in IGZO to ensure minimal interfacial recombination and high charge-blocking performance in the heterojunctions. The resulting oxide p−n heterojunction exhibits a high rectification ratio greater than 10 3 at ±3 V, a low saturation current of ∼2 × 10 −10 A, and a small turn-on voltage of ∼0.5 V. In addition, the demonstrated oxide p−n heterojunctions exhibit excellent stability over time in air due to the p-SnO x with completed reaction annealing in air and the reduced trap density in n-IGZO.
The bonding of ceramic to metal has been challenging due to the dissimilar nature of the materials, particularly different surface properties and the coefficients of thermal expansion (CTE). To address the issues, gas phase-processed thin metal films were inserted at the metal/ceramic interface to modify the ceramic surface and, therefore, promote heterogeneous bonding. In addition, an alloy bonder that is mechanically and chemically activated at as low as 220 °C with reactive metal elements was utilized to bond the metal and ceramic. Stainless steel (SS)/Zerodur is selected as the metal/ceramic bonding system where Zerodur is chosen due to the known low CTE. The low-temperature process and the low CTE of Zerodur are critical to minimizing the undesirable stress evolution at the bonded interface. Sputtered Ti, Sn, and Cu (300 nm) were deposited on the Zerodur surface, and then dually activated molten alloy bonders were spread on both surfaces of the coated Zerodur and SS at 220 °C in air. The shear stress of the bonding was tested with a custom-designed fixture in a universal testing machine and was recorded through a strain indicator. The mechanical strength and the bonded surface property were compared as a function of interfacial metal thin film and analyzed through thermodynamic interfacial stability/instability calculations. A maximum shear strength of bonding of 4.36 MPa was obtained with Cu interfacial layers, while that of Sn was 3.53 MPa and that of Ti was 3.42 MPa. These bonding strengths are significantly higher than those (∼0.04 MPa) of contacts without interfacial reactive thin metals.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.