Within the last years, perovskite semiconductors have been widely applied as active layers in thin film solar cells, as well as in many other opto-electronic devices such as light emitting diodes [1,2] and (photo) detectors. [3][4][5] Owing to their defect-tolerant nature and ease of fabrication from solution and/or vacuum deposition, [6] perovskites are the almost ideal candidate to be combined with already well-established commercial solar cell technologies such as monocrystalline silicon, [7] CIGS [8] but also with perovskite itself (all-perovskite tandem cells). [9] In the last few years, these properties enabled major research breakthroughs within a comparatively short time which has accelerated research on various PV technologies. For example, with respect to single-junction perovskite solar cells, the efficiency increased from 3.9% to 25.2% [10] within only 10 years and monolithic silicon/perovskite tandem cells reached up to 29.1% power conversion efficiency within an arguably even shorter Perovskite photovoltaic (PV) cells have demonstrated power conversion efficiencies (PCE) that are close to those of monocrystalline silicon cells; however, in contrast to silicon PV, perovskites are not limited by Auger recombination under 1-sun illumination. Nevertheless, compared to GaAs and mono crystalline silicon PV, perovskite cells have significantly lower fill factors due to a combination of resistive and non-radiative recombination losses. This necessitates a deeper understanding of the underlying loss mechanisms and in particular the ideality factor of the cell. By measuring the intensity dependence of the external open-circuit voltage and the internal quasi-Fermi level splitting (QFLS), the transport resistance-free efficiency of the complete cell as well as the efficiency potential of any neat perovskite film with or without attached transport layers are quantified. Moreover, intensitydependent QFLS measurements on different perovskite compositions allows for disentangling of the impact of the interfaces and the perovskite surface on the non-radiative fill factor and open-circuit voltage loss. It is found that potassium-passivated triple cation perovskite films stand out by their exceptionally high implied PCEs > 28%, which could be achieved with ideal transport layers. Finally, strategies are presented to reduce both the ideality factor and transport losses to push the efficiency to the thermodynamic limit.

Simulated energy band diagrams of thin and thick PM6:Y6 devices.

Recent advancements in perovskite solar cell performance were achieved by stabilizing the α-phase of FAPbI3 in nip-type architectures. However, these advancements could not be directly translated to pin-type devices. Here, we fabricated a high-quality double cation perovskite (MA0.07FA0.93PbI3) with low bandgap energy (1.54 eV) using a two-step approach on a standard polymer (PTAA). The perovskite films exhibit large grains (∼1 μm), high external photoluminescence quantum yields of 20%, and outstanding Shockley–Read–Hall carrier lifetimes of 18.2 μs without further passivation. The exceptional optoelectronic quality of the neat material was translated into efficient pin-type cells (up to 22.5%) with improved stability under illumination. The low-gap cells stand out by their high fill factor (∼83%) due to reduced charge transport losses and short-circuit currents >24 mA cm–2. Using intensity-dependent quasi-Fermi level splitting measurements, we quantify an implied efficiency of 28.4% in the neat material, which can be realized by minimizing interfacial recombination and optical losses.

In crystalline and amorphous semiconductors, the temperature-dependent Urbach energy can be determined from the inverse slope of the logarithm of the absorption spectrum and reflects the static and dynamic energetic disorder. Using recent advances in the sensitivity of photocurrent spectroscopy methods, we elucidate the temperature-dependent Urbach energy in lead halide perovskites containing different numbers of cation components. We find Urbach energies at room temperature to be 13.0 ± 1.0, 13.2 ± 1.0, and 13.5 ± 1.0 meV for single, double, and triple cation perovskite. Static, temperature-independent contributions to the Urbach energy are found to be as low as 5.1 ± 0.5, 4.7 ± 0.3, and 3.3 ± 0.9 meV for the same systems. Our results suggest that, at a low temperature, the dominant static disorder in perovskites is derived from zero-point phonon energy rather than structural disorder. This is unusual for solution-processed semiconductors but broadens the potential application of perovskites further to quantum electronics and devices.

The combined effect of ultraviolet (UV) light soaking and self‐assembled monolayer deposition on the work function (WF) of thin ZnO layers and on the efficiency of hole injection into the prototypical conjugated polymer poly(3‐hexylthiophen‐2,5‐diyl) (P3HT) is systematically investigated. It is shown that the WF and injection efficiency depend strongly on the history of UV light exposure. Proper treatment of the ZnO layer enables ohmic hole injection into P3HT, demonstrating ZnO as a potential anode material for organic optoelectronic devices. The results also suggest that valid conclusions on the energy‐level alignment at the ZnO/organic interfaces may only be drawn if the illumination history is precisely known and controlled. This is inherently problematic when comparing electronic data from ultraviolet photoelectron spectroscopy (UPS) measurements carried out under different or ill‐defined illumination conditions.

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Monolayer (ML) transition-metal dichalcogenides (TMDCs) exhibit numerous unique optoelectronic features. This motivates recent efforts to combine TMDCs with organic semiconductors to form heterostructures with tailorable properties that feature the advantages of both materials. Here, we study the photoinduced charge transfer across hybrid interfaces of ML-MoS 2 and a series of organic semiconductors�often used as hole transport materials�where we systematically tune the offsets of the frontier energy levels. Steady-state photoluminescence and ultrafast transient absorption spectroscopy reveal that a larger energy level offset causes a lower efficiency of photoinduced charge transfer but also a longer lifetime of the charge separated state. Both observations are explained in the framework of Marcus' theory of electron transfer. In fact, our observations question direct electron−hole recombination across the hybrid interface as the main decay pathway for photogenerated carriers in the considered systems. Instead, back transfer of holes to ML-MoS 2 is suggested as the key decay channel. Adding a 1 nm LiF interlayer causes a significant slowdown of interfacial carrier recombination while not suppressing free carrier formation. This strategy serves as a guideline for optimizing further hybrid systems toward high-performance ML-TMDC/organic-based optoelectronic devices.

As a direct‐bandgap transition semiconductor with high carrier mobility, monolayer (ML) transition metal dichalcogenides (TMDCs) have attracted significant attention as a promising class of material for photodetection. It is reported that these layers exhibit a persistent photoconductance (PPC) effect, which is assigned to long‐lasting hole capture by deep traps. Therefore, TMDCs‐based photodetectors show a high photoresponse but also a slow response. Herein, intensity‐modulated photocurrent spectroscopy (IMPS) with steady‐state background illumination is performed to investigate the photoresponse dynamics in a hybrid photodetector based on ML MoS2 covered with an ultrathin layer of phthalocyanine (H2Pc) molecules. The results demonstrate that adding the H2Pc layer speeds up the photoresponse of the neat ML‐MoS2 photodetector by almost two orders of magnitude without deteriorating its responsivity. The origin of these improvements is revealed by applying the Hornbeck–Haynes model to the photocarrier dynamics in the IMPS experiment. It is shown that the improved response speed of the hybrid device arises mostly from a faster detrapping of holes in the presence of the H2Pc layer, while the trap densities remain rather unchanged. Meanwhile, the additional absorption of photons in the H2Pc layer contributes to photocarrier generation, resulting in an enlarged responsivity of the hybrid device.