Within the last years, perovskite semiconductors have been widely applied as active layers in thin film solar cells, as well as in many other opto-electronic devices such as light emitting diodes [1,2] and (photo) detectors. [3][4][5] Owing to their defect-tolerant nature and ease of fabrication from solution and/or vacuum deposition, [6] perovskites are the almost ideal candidate to be combined with already well-established commercial solar cell technologies such as monocrystalline silicon, [7] CIGS [8] but also with perovskite itself (all-perovskite tandem cells). [9] In the last few years, these properties enabled major research breakthroughs within a comparatively short time which has accelerated research on various PV technologies. For example, with respect to single-junction perovskite solar cells, the efficiency increased from 3.9% to 25.2% [10] within only 10 years and monolithic silicon/perovskite tandem cells reached up to 29.1% power conversion efficiency within an arguably even shorter Perovskite photovoltaic (PV) cells have demonstrated power conversion efficiencies (PCE) that are close to those of monocrystalline silicon cells; however, in contrast to silicon PV, perovskites are not limited by Auger recombination under 1-sun illumination. Nevertheless, compared to GaAs and mono crystalline silicon PV, perovskite cells have significantly lower fill factors due to a combination of resistive and non-radiative recombination losses. This necessitates a deeper understanding of the underlying loss mechanisms and in particular the ideality factor of the cell. By measuring the intensity dependence of the external open-circuit voltage and the internal quasi-Fermi level splitting (QFLS), the transport resistance-free efficiency of the complete cell as well as the efficiency potential of any neat perovskite film with or without attached transport layers are quantified. Moreover, intensitydependent QFLS measurements on different perovskite compositions allows for disentangling of the impact of the interfaces and the perovskite surface on the non-radiative fill factor and open-circuit voltage loss. It is found that potassium-passivated triple cation perovskite films stand out by their exceptionally high implied PCEs > 28%, which could be achieved with ideal transport layers. Finally, strategies are presented to reduce both the ideality factor and transport losses to push the efficiency to the thermodynamic limit.

perovskite device allowing us to rule out this mechanism. We conclude that recombination across the interface via C 60 trap states is the operational mechanism and that the traps originate either from charge transfer states or DOS broadening at the interface pinning the LUMO below the conduction band of the perovskite. The investigation laid out here and proof of concept devices demonstrates that reducing the hole concentration at the perovskite C 60 interface and "point contact" strategies will allow one to improve the device V OC , paving the way for further strategies to eliminate this loss pathway.

Perovskites offer exciting opportunities to realize efficient multijunction photovoltaic devices. This requires high-V OC and often Br-rich perovskites, which currently suffer from halide segregation. Here, we study triple-cation perovskite cells over a wide bandgap range (∼1.5–1.9 eV). While all wide-gap cells (≥1.69 eV) experience rapid phase segregation under illumination, the electroluminescence spectra are less affected by this process. The measurements reveal a low radiative efficiency of the mixed halide phase which explains the V OC losses with increasing Br content. Photoluminescence measurements on nonsegregated partial cell stacks demonstrate that both transport layers (PTAA and C60) induce significant nonradiative interfacial recombination, especially in Br-rich (>30%) samples. Therefore, the presence of the segregated iodide-rich domains is not directly responsible for the V OC losses. Moreover, LiF can only improve the V OC of cells that are primarily limited by the n-interface (≤1.75 eV), resulting in 20% efficient 1.7 eV bandgap cells. However, a simultaneous optimization of the p-interface is necessary to further advance larger bandgap (≥1.75 eV) pin-type cells.

Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various optoelectronic devices, such as solar cells, photodetectors, light emitting and memory devices, and so on. Until now, perovskite semiconductors face challenges regarding their stability, reproducibility, and toxicity. In this Roadmap, we combine the expertise of chemistry, physics, and device engineering from leading experts in the perovskite research community to focus on the fundamental material properties, the fabrication methods, characterization and photophysical properties, perovskite devices, and current challenges in this field. We develop a comprehensive overview of the current state-of-the-art and offer readers an informed perspective of where this field is heading and what challenges we have to overcome to get to successful commercialization.

Approaches to boost the efficiency and stability of perovskite solar cells often address one singular problem in a specific device configuration. In this work, we utilize a poly(ionic-liquid) (PIL) to...