This article investigates the ultrahigh sensitivity and DUV photodetection capability of a hybrid oxide‐nitride stack comprising β‐Ga2O3 layers grown heterogeneously on a conductive ceramic crystal. The ceramic crystal, namely a TiN interlayer, which acts as a lattice template, was heteroepitaxially grown on bulk MgO. Because β‐Ga2O3 is a monoclinic phase crystal, it is conjectured that its nucleation and growth process on cubic phase TiN is entropic in nature, whereby the two unit cell configurations of the β‐Ga2O3 crystal, exhibiting rotational twin domains, grew alternately side by side in a semiperiodic manner on TiN while maintaining a single crystal phase. This film formation mechanism contributed to the introduction of additional defects in the β‐Ga2O3 lattice (Taylor's dislocations in addition to growth‐induced vacancies). The fabricated DUV photodetectors based on the resulting metal‐semiconductor junction heterodiodes exhibited an average peak spectral responsivity of 276.72 A W−1 and fast decay constants in the order of 500 ms in the ultraviolet‐C regime, with true solar‐blind characteristics manifested by ultraviolet‐to‐visible rejection ratios of up to 2 × 103 and illuminating power density of around 70 μW cm−2. The crystallographic orientation relationships between the TiN and β‐Ga2O3 crystals, as well as the lattice fit and dislocation types, are revealed and examined.
In this paper, we develop circuit models for spintronic devices that are under the application of electric and magnetic fields. Starting from time-dependent drift-diffusion equations in nonmagnets and ferromagnets, we spatially and temporally discretize the resulting current-voltage relations using linear multistep methods, which yield equivalent circuit models characterized by finite-difference versions of the so-called 4 × 4 conductance matrices. By using a time-dependent formulation, introducing a new model for ferromagnets, and including ubiquitous effects such as spin dissipation, spin precession, as well as thermal noise, our model serves as a framework to unify and expand the existing models in the literature. To demonstrate our model's utility in applications, we performed simulations on several spintronic devices and validated the results against simulated and measured data. We also discuss extensions to the model and general directions for the future research.
In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/Ni81Fe19 (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.
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