Heteroepitaxial β‐Ga₂O₃ on Conductive Ceramic Templates: Toward Ultrahigh Gain Deep‐Ultraviolet Photodetection

Abstract

This article investigates the ultrahigh sensitivity and DUV photodetection capability of a hybrid oxide‐nitride stack comprising β‐Ga2O3 layers grown heterogeneously on a conductive ceramic crystal. The ceramic crystal, namely a TiN interlayer, which acts as a lattice template, was heteroepitaxially grown on bulk MgO. Because β‐Ga2O3 is a monoclinic phase crystal, it is conjectured that its nucleation and growth process on cubic phase TiN is entropic in nature, whereby the two unit cell configurations of the β‐Ga2O3 crystal, exhibiting rotational twin domains, grew alternately side by side in a semiperiodic manner on TiN while maintaining a single crystal phase. This film formation mechanism contributed to the introduction of additional defects in the β‐Ga2O3 lattice (Taylor's dislocations in addition to growth‐induced vacancies). The fabricated DUV photodetectors based on the resulting metal‐semiconductor junction heterodiodes exhibited an average peak spectral responsivity of 276.72 A W−1 and fast decay constants in the order of 500 ms in the ultraviolet‐C regime, with true solar‐blind characteristics manifested by ultraviolet‐to‐visible rejection ratios of up to 2 × 103 and illuminating power density of around 70 μW cm−2. The crystallographic orientation relationships between the TiN and β‐Ga2O3 crystals, as well as the lattice fit and dislocation types, are revealed and examined.

Plasmonic titanium nitride nanomaterials prepared by physical vapor deposition methods

“…In modern integrated circuits, to block the interconnection or diffusion of metal atoms into the Si or SiO 2 substrate, a barrier layer with high conductivity, good adhesion to both the substrate and metals, high-temperature stability, and high mechanical durability is needed. TiN is therefore appropriate in this regard as it exhibits all of these features [55,56]. More recently, TiN has also been considered as a potential alternative plasmonic material to substitute conventional coinage metals, such as Au, Ag, and Cu.…”

Corrosion Improvement of 304L Stainless Steel by ZrSiN and ZrSi(N,O) Mono- and Double-Layers Prepared by Reactive Cathodic Arc Evaporation

“…The unique properties of TiN and ZrN coatings have led to their widespread use in a noteworthy number of mechanical and tribological applications, such as refractory compounds to be used at high temperatures, biomaterials, decorative materials, optical and plasmonic materials, corrosion-resistant or diffusion barrier coatings, and electrodes used in microelectronics [19][20][21][22].…”

CMOS-compatible MIS–Schottky heterojunctions for plasmonic waveguide modulation

“…This configuration enables exploration of ITO's semiconductive properties and facilitates electrical characterization. 4 The second device, a coupled hybrid plasmonic waveguide (CHPW) modulator built on a silicon-on-insulator (SOI) platform, leverages a graded-index waveguide architecture to modulate light at telecom wavelengths (1.53-1.60 µm). This topology, a crucial step towards oxide-based plasmonic modulation, 5 exhibits exceptional performance through charge carrier dispersion and dynamic reconfigurability for various modulation formats.…”