The canonical quantisation of a charged particle in an intense laser background is developed and the associated two-point function calculated. It is shown how the causal propagator can be extracted. We provide an interpretation of this propagator in terms of degenerate quantum processes. The spectral properties of the propagator are derived and we show how multi-pole structures emerge as a perturbative feature. We also calculate the associated multiple wave-function renormalisations to all orders in perturbation theory. Our calculations are for both circular and linearly polarised plane wave laser backgrounds.Comment: 26 pages, 8 figure

No abstract

No abstract

No abstract

No abstract

Investigated is a novel model in the photo-thermoelasticity theory that takes into account the impact of porosity and initial stress. A generalized photo-thermoelastic that is initially stressed and has voids is taken into consideration for the general plane strain problem. The solutions for the fundamental variables in two dimensions are obtained using the Laplace–Fourier transforms method in two dimensions (2D). Physical fields such as temperature, carrier concentration, normal displacement, and change in volume fraction field can all be solved analytically. The plasma of electrons, thermal load, and mechanical boundary conditions at the porosity medium’s free surface are used to show certain illustrations. The context of the Laplace–Fourier transformation inversion operations yields complete solutions. To complete the numerical simulation and compare several thermal memories under the influence of the porosity parameters, silicon (Si), a semiconductor porosity material, is used. The main physical variables are described and graphically displayed with the new parameters.

A novel model in the theory of photo-thermoelasticity with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photo-thermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of microelement process during two dimensions (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions, which they apply at the outer free surface of the elastic medium. Some semiconductor materials as silicon (Si) and Germanium (Ge) are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

A novel model in the photo-thermoelasticity theory with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photothermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of the microelement process during two-dimensional (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions are applied at the outer free surface of the elastic medium. Some semiconductor materials, as silicon (Si) and Germanium (Ge), are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.