Generalized photo-thermo-microstretch elastic solid semiconductor medium due to the excitation process

Abstract

A novel model in the photo-thermoelasticity theory with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photothermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of the microelement process during two-dimensional (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions are applied at the outer free surface of the elastic medium. Some semiconductor materials, as silicon (Si) and Germanium (Ge), are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

Internal heat source, rotation, magnetic field, and initial stress influence on p-waves propagation in a photothermal semiconducting medium

“…A novel mathematical model of a rotating elastic semiconducting medium is developed by Lotfy [13] in the context of photothermal excitation. Another mathematical model was examined by Raddadi et al [14] in the microstretch photo-thermoelasticity theory. Abo-Dahab and Lotfy [15] investigated the twotemperature plane strain problem in a semiconducting medium under photothermal theory.…”