In this p a p er a TCAD method to determine surface electron density of a three terminal (3T) symmetric double gate silicon n-tunnel FET (DG Si nTFET) is p resented. This research p a p er p resents the changes in the channel surface electron density of symmetric n-Tunnel Field Effect Transistor (nTFET) devices. The p hysical reasoning behind the modeling a pp roach has also been p resented. It has been observed that the electron density in n-TFET, goes much beyond the do p ing concentration in channel. Also, unlike MOSFET, the electron density in sub threshold regime de p ends on the drain voltage. For lower drain voltages «O.4V) the electron density is much higher than the do p ing concentration in channel, but for higher drain voltages, electron density below threshold might be much lesser than the channel do p ing concentration.
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