No abstract

Efficiency roll-off is a major issue for most types of light-emitting diodes (LEDs), and its origins remain controversial. Here we present investigations of the efficiency roll-off in perovskite LEDs based on two-dimensional layered perovskites. By simultaneously measuring electroluminescence and photoluminescence on a working device, supported by transient photoluminescence decay measurements, we conclude that the efficiency roll-off in perovskite LEDs is mainly due to luminescence quenching which is likely caused by non-radiative Auger recombination. This detrimental effect can be suppressed by increasing the width of quantum wells, which can be easily realized in the layered perovskites by tuning the ratio of large and small organic cations in the precursor solution. This approach leads to the realization of a perovskite LED with a record external quantum efficiency of 12.7%, and the efficiency remains to be high, at approximately 10%, under a high current density of 500 mA cm −2 .

We report a facile solution-based approach to the in situ growth of perovskite films consisting of monolayers of CsPbBr nanoplates passivated by bulky phenylbutylammonium (PBA) cations, that is, two-dimensional layered PBA(CsPbBr)PbBr perovskites. Optimizing film formation processes leads to layered perovskites with controlled n values in the range of 12-16. The layered perovskite emitters show quantum-confined band gap energies with a narrow distribution, suggesting the formation of thickness-controlled quantum-well (TCQW) structures. The TCQW CsPbBr films exhibit smooth surface features, narrow emission line widths, low trap densities, and high room-temperature photoluminance quantum yields, resulting in high-color-purity green light-emitting diodes (LEDs) with remarkably high external quantum efficiencies (EQEs) of up to 10.4%. The solution-based approach is extended to the preparation of TCQW CsPbI films for high-color-purity red perovskite LEDs with high EQEs of up to 7.3%.

Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe 2 ), are promising candidates for polarized photodetection due to their lowsymmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe 2 /GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe 2 layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe 2 -based heterostructure for highperformance polarization-sensitive UV photodetection.

A modular and efficient method for the synthesis of α-substituted 1,2-dihydroquinolines is described. Under mild metal-free conditions, readily available N-carbamoyl 1,2-dihydroquinolines undergo oxidative C-H alkynylation, alkenylation, and allylation with a range of potassium trifluoroborates using TEMPO oxoammonium salt as an oxidant.

Light-emitting diodes (LEDs) based on perovskites show great potential in lighting and display applications. However, although perovskite films with high photoluminescence quantum efficiencies are commonly achieved, the efficiencies of perovskite LEDs are largely limited by the low light out-coupling efficiency. Here, we show that high-efficiency perovskite LEDs with a high external quantum efficiency of 20.2% and an ultrahigh radiant exitance up to 114.9 mW cm −2 can be achieved by employing the microcavity effect to enhance light extraction. The enhanced microcavity effect and light outcoupling efficiency are confirmed by the study of angle-dependent emission profiles. Our results show that both the optical and electrical properties of the device need to be optimized to achieve high-performance perovskite LEDs.

Mixed-formamidinium (FA) and -cesium (Cs) cations were used to fabricate multiple quantum well (MQW) perovskite light-emitting diodes (PeLEDs). The partial substitution of FA with Cs facilitates the formation of wider quantum wells, which can effectively reduce efficiency roll-off by suppressing Auger recombination. The device has a peak external quantum efficiency (EQE) of 7.8% at a current density of 125 mA cm, maintaining an EQE of ∼6.6% at a high current density of 500 mA cm. Due to the improved stability of mixed-cation structure, we achieve a PeLED device with a lifetime of ∼31 h under a constant current density of 10 mA cm.

No abstract