We present reflective plasmonic colors based on the concept of localized surface plasmon resonances (LSPR) for plastic consumer products. In particular, we bridge the widely existing technological gap between clean-room fabricated plasmonic metasurfaces and the practical call for large-area structurally colored plastic surfaces robust to daily life handling. We utilize the hybridization between LSPR modes in aluminum nanodisks and nanoholes to design and fabricate bright angle-insensitive colors that may be tuned across the entire visible spectrum.
The possibility of combining atomic and plasmonic resonances opens new avenues for tailoring the spectral properties of materials. Following the rapid progress in the field of plasmonics, it is now possible to confine light to unprecedented nanometre dimensions, enhancing light-matter interactions at the nanoscale. However, the resonant coupling between the relatively broad plasmonic resonance and the ultra-narrow fundamental atomic line remains challenging. Here we demonstrate a resonantly coupled plasmonic-atomic platform consisting of a surface plasmon resonance and rubidium ( 85 Rb) atomic vapour. Taking advantage of the Fano interplay between the atomic and plasmonic resonances, we are able to control the lineshape and the dispersion of this hybrid system. Furthermore, by exploiting the plasmonic enhancement of light-matter interactions, we demonstrate alloptical control of the Fano resonance by introducing an additional pump beam.
Internal
photoemission of charged carriers from metal to semiconductors
plays an important role in diverse fields such as sub-bandgap photodetectors
and catalysis. Typically, the quantum efficiency of this process is
relatively low, posing a stringent limitation on its applicability.
Here, we show that the efficiency of hot carrier injection from a
metal into a semiconductor across a Schottky barrier can be enhanced
by as much as an order of magnitude in the presence of surface roughness
on the scale of a few atomic layers. Our results are obtained using
a simple semianalytical theory and indicate that properly engineered
plasmonic-assisted internal photoemission photodetectors can be a
viable alternative in silicon photonics. Other applications, such
as plasmonic-enhanced photocatalysis, can also benefit from these
results.
We present a comprehensive experimental and theoretical study on the near- and far-field properties of plasmonic oligomers using radially and azimuthally polarized excitation. These unconventional polarization states are perfectly matched to the high spatial symmetry of the oligomers and thus allow for the excitation of some of the highly symmetric eigenmodes of the structures, which cannot be excited by linearly polarized light. In particular, we study hexamer and heptamer structures and strikingly find very similar optical responses, as well as the absence of a Fano resonance. Furthermore, we investigate the near-field distributions of the oligomers using near-field scanning optical microscopy (NSOM). We observe significantly enhanced near-fields, which arise from efficient excitation of the highly symmetric eigenmodes by the radially and azimuthally polarized light fields. Our study opens up possibilities for tailored light-matter interaction, combining the design freedom of complex plasmonic structures with the remarkable properties of radially and azimuthally polarized light fields.
Plasmonic enhanced Schottky photodetectors operating on the basis of the internal photoemission process are becoming an alternative for the more conventional photodetectors based on interband transitions for light detection in the infrared. This is because such detectors typically consist of silicon and CMOS compatible metals, thus, allowing low cost and large scale fabrication. Most of the reports so far were focused on measuring the responsivity of the device. Here, we provide a detailed analysis for the optimization of internal photoemission based devices in terms of figure of merits such as signal-to-noise ratio (SNR) and noise equivalent power (NEP). Following the analysis, we experimentally demonstrate the operation of pyramidally shaped, silicon-based, internal photoemission detectors in the mid-infrared. The measured devices are capable of photodetection at wavelengths up to ∼2.5 μm. This paves the way for the use of plasmonic enhanced silicon photodetectors for a broad range of applications including mid-IR circuitry and biochemical sensing.
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