2018
DOI: 10.1021/acsphotonics.8b00643
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The Role of Surface Roughness in Plasmonic-Assisted Internal Photoemission Schottky Photodetectors

Abstract: Internal photoemission of charged carriers from metal to semiconductors plays an important role in diverse fields such as sub-bandgap photodetectors and catalysis. Typically, the quantum efficiency of this process is relatively low, posing a stringent limitation on its applicability. Here, we show that the efficiency of hot carrier injection from a metal into a semiconductor across a Schottky barrier can be enhanced by as much as an order of magnitude in the presence of surface roughness on the scale of a few … Show more

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Cited by 57 publications
(56 citation statements)
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“…[16,18,19] (as demonstrated in the current manuscript), existing theory of electron tunnelling (see e.g., Ref. [58]) and the vast knowledge accumulated on heterogeneous catalysis on the various chemical parameters that affect the reaction rate can now provide, for the first time, the necessary framework to analyze the relative efficiency of non-thermal and thermal effects and distinguish between optical and chemical aspects in these previously published papers, as well as in future papers on the topic. In this Supplementary Information Section, we compute the temperature of the catalyst pellet described in [29, paper III] and [30, paper IV], respectively.…”
Section: Discussionmentioning
confidence: 56%
“…[16,18,19] (as demonstrated in the current manuscript), existing theory of electron tunnelling (see e.g., Ref. [58]) and the vast knowledge accumulated on heterogeneous catalysis on the various chemical parameters that affect the reaction rate can now provide, for the first time, the necessary framework to analyze the relative efficiency of non-thermal and thermal effects and distinguish between optical and chemical aspects in these previously published papers, as well as in future papers on the topic. In this Supplementary Information Section, we compute the temperature of the catalyst pellet described in [29, paper III] and [30, paper IV], respectively.…”
Section: Discussionmentioning
confidence: 56%
“…In order to test this (rather simple) estimate, we ran our calculation with an additional tunneling term of the form −γ T g(ε)f (ε), where γ T = 10 13 Hz and 10 15 Hz, corresponding to a slow (100 femtosecond) and fast (few femtosecond) tunneling time (which is extremely fast, as realistic tunneling times were shown to be as short as 100 fs only in the best case scenario, see e.g., [69]); g is centered at ≈ 1.5eV above the Fermi energy and has an energy width of a few hundreds of meV. In Fig.…”
Section: G Evaluating the Power Density For Different Processmentioning
confidence: 99%
“…Shown in Fig.13c but this approach entirely neglects the possibility of backscattering into the metal. Another approach [70] was to use the explicit interface roughness scattering explicitly to obtain the enhancement of extraction efficiency by a factor of a few. That model, however, could only be applied to a relatively small roughness, and, as matter of fact, neglected enhanced backscattering as well.…”
Section: A Transport Efficiencymentioning
confidence: 99%