Optimization and Experimental Demonstration of Plasmonic Enhanced Internal Photoemission Silicon Schottky Detectors in the Mid-IR

Grajower, Meir; Desiatov, Boris; Mazurski, Noa; Shappir, J.; Khurgin, Jacob B.; Levy, Uriel

doi:10.1021/acsphotonics.7b00110

Cited by 30 publications

(34 citation statements)

References 21 publications

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“…They observed the phenomenon of getting significant increase in the ratio that was reached up to ≈1200% at a wavelength of 685 nm. Grajower et al studied the phenomena of internal photoemission process (IPE) of photodetection of light, which was up to 2.5 um in silicon plasmonic photodetector . This technique relays on the plasmonic‐boosted IPE in pyramid‐like structure, which behaves as the antenna to gain a large amount of light due to its base beneficial to photodetection at NIR spectrum.…”

Section: Mechanism Of Plasmonic‐assisted Devicesmentioning

confidence: 99%

“…Grajower et al studied the phenomena of internal photoemission process (IPE) of photodetection of light, which was up to 2.5 um in silicon plasmonic photodetector. [125] This technique relays on the plasmonic-boosted IPE in pyramid-like structure, which behaves as the antenna to gain a large amount of light due to its base beneficial to photodetection at NIR spectrum. Due to this approach, they observed low noise as well as strong signals at the Schottky junction area.…”

Section: Light Sensing (Photodetectors) Devicesmentioning

confidence: 99%

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Surface Plasmonic‐Assisted Photocatalysis and Optoelectronic Devices with Noble Metal Nanocrystals: Design, Synthesis, and Applications

Zada

Muhammad

Ahmad

et al. 2019

Adv Funct Materials

218

134

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The surface plasmon resonance (SPR) of noble metals is known to improve the efficiency of various processes and devices. The photocatalytic process is the production of fuels and storage of solar photons in chemical bonds without imposing harmful threats to the environment. Photovoltaics are other devices utilizing solar energy for electrical energy. Similarly, other optoelectronic devices like photodetectors absorb photons and convert it into charges via electron–hole dissociation processes. In contrast, light‐emitting optoelectronic devices work based on the phenomenon of charge recombination to produce light. All these devices, however, have efficiency limitations, which impede the application of novel functional materials in these devices. A more direct approach is the utilization of noble metals and their complexes, which significantly enhance the efficiencies of these devices by SPR. This article highlights recent works and applications of noble metals by SPR‐enhanced photocatalysis for hydrogen evolution from water, CO2 conversion into useful compounds, and oxidation of hazardous pollutants. In addition, the plasmon‐enhancement of optoelectronic devices is summarized. Several possible mechanisms that have been previously reported in the literature are discussed in this work, with particular emphasis on different features of these mechanisms involving devices that are not highlighted and therefore need more attention.

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Section: Mechanism Of Plasmonic‐assisted Devicesmentioning

confidence: 99%

Section: Light Sensing (Photodetectors) Devicesmentioning

confidence: 99%

Surface Plasmonic‐Assisted Photocatalysis and Optoelectronic Devices with Noble Metal Nanocrystals: Design, Synthesis, and Applications

Zada

Muhammad

Ahmad

et al. 2019

Adv Funct Materials

218

134

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“…at a Schottky-contact between the metal and the semiconductor. This energy barrier is used for selecting the hot carriers and blocking off carriers in thermal equilibrium (dark current) [43]. The hot-carrier type detectors represent another ultra-fast detection scheme.…”

Section: B Hot-carrier Type Photodetectorsmentioning

confidence: 99%

“…The J d,sem is directly proportional to the carrier densities and is high for photoconductors whereas it is low in p-i-n photodiodes. The Schottky-barrier dark current can be calculated as follows [43]:…”

Section: Characteristics Of a Detector: Noise Quantum Efficiencymentioning

confidence: 99%

Plasmonic Photodetectors

Dorodnyy

Salamin

et al. 2018

IEEE J. Select. Topics Quantum Electron.

102

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Plasmonic photodetectors are attracting the attention of the photonics community. Plasmonics is attractive because metallic structures have the ability to confine light by coupling an electromagnetic wave to charged carrier oscillations at the surface of the metal. The wavelength of such oscillations can be much smaller than the corresponding light wavelength in vacuum. This enables the light-matter interaction on a deep subwavelength scale, which in turn allows for more compact and potentially higher speed devices. In this review, we discuss different types of photodetectors and ways in which plasmonics can be applied to them. We elucidate several plasmonic photodetector concepts/schemes and discuss the main physical principles behind their operation. Finally, we reflect on the characteristics of an "ideal" photodetector and propose a device that might be the perfect plasmonic detector.

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“…Such photodetectors are the subject of extensive research over the last few years. 1,9,[22][23][24][25][26][27][28][29][30][31][32] The operational principle of our device is as follows. Light impinges on the device and can couple to SPPs at the metal edges in two regions (i.e., it can be coupled through edge A and/or edge B, Fig.…”

mentioning

confidence: 99%

Integrated on-chip silicon plasmonic four quadrant detector for near infrared light

Grajower

Desiatov

Mazurski

et al. 2018

Applied Physics Letters

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The ability to accurately track light beams in a given space is highly desired for myriad applications e.g., laser cutting, welding, interferometry, sensing, optical tweezers, free space optical communications, and more. Typically, achieving this goal in the short wave infrared requires the use of a cumbersome and expensive InGaAs photodetector implemented as a four quadrant (4Q) device. In this paper, we experimentally demonstrate an attractive approach by implementing a cost effective novel silicon based plasmonic 4Q photodetector. Our 4Q photodetector is implemented using a CMOS compatible plasmonic enhanced IPE Schottky photodetector and can operate in the short wave infrared band, where conventional silicon photodetectors cannot detect light. We have demonstrated the operation of the device and were able to accurately track optical beams of various beam waists at telecom wavelengths. The demonstrated device is based on standard materials and fabrication techniques which are common in the CMOS industry. As such, it provides an additional important example for the potential of plasmonics in the realization of chip scale novel devices which can be integrated with multiple other functionalities. Published by AIP Publishing.

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Optimization and Experimental Demonstration of Plasmonic Enhanced Internal Photoemission Silicon Schottky Detectors in the Mid-IR

Cited by 30 publications

References 21 publications

Surface Plasmonic‐Assisted Photocatalysis and Optoelectronic Devices with Noble Metal Nanocrystals: Design, Synthesis, and Applications

Surface Plasmonic‐Assisted Photocatalysis and Optoelectronic Devices with Noble Metal Nanocrystals: Design, Synthesis, and Applications

Plasmonic Photodetectors

Integrated on-chip silicon plasmonic four quadrant detector for near infrared light

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