All‐inorganic halide perovskite Cs4PbBr6 thin films are synthesized at low temperature through a facile chemical deposition method. The deposited films are implemented as a dielectric and dissolvable layer with the Au/Cs4PbBr6/PEDOT:PSS/ITO configuration for transient memory electronic devices. The bipolar resistive switching phenomena, good switching cycling (endurance), and long data retention (104 s) are demonstrated on as‐grown nonvolatile memory device to evaluate its high stability, reliability, and reproducibility. The I–V relationship shows ohmic conduction behavior at the low‐resistance state, whereas space charge limited current mechanism is dominating at the high‐resistance state. The conductive filaments formation and rupture, accompanied by Br− vacancies in Cs4PbBr6 layer, are employed to elucidate switching mechanism. More interestingly, the soluble insulation layer of the devices is quickly dissolved and the color of films transforms from yellow to white as fast as 2 s in deionized water, which exhibits good transient performance. Moreover, the electrical characteristics as well as optical properties vanish absolutely to further demonstrate the abovementioned transition after the memory devices dissolve in deionized water. This work offers a novel way to prepare disposable electronic memory devices by utilizing cheap perovskite‐based materials for transient electronics memory area as well as implantable electronics systems.
The uniform bipolar resistive switching effect has been observed in Pt/BiFeO 3 /LaNi 0.95 Fe 0.05 O 3 /Si structures. The use of Fe doped LaNiO 3 as electrodes can improve the resistive switching performance of Pt/BiFeO 3 /LaNi 0.95 Fe 0.05 O 3 /Si devices, such as lower operating voltages and power consumption. Such devices also exhibit stable bipolar resistive switching characteristics with a resistance ratio of about 20 and a retention time of 10 3 s. On the basis of the current-voltage characteristics, the dominant conduction mechanisms were inferred to be ohmic conduction in the low-resistance state and Schottky emission in the high-resistance state. The conducting filament-related model has been proposed to explain the physical mechanism underlying the bipolar resistive switching behavior in terms of the migration of oxygen vacancies.
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