All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs4PbBr6 Perovskite Films

“…The X‐ray diffraction (XRD) result verifies the crystallization of the as‐grown thin films, as shown in Figure a, which indicates the thin films match a highly crystalline rhombohedral Cs 4 PbBr 6 phase (JPCDS No. 73‐2478) with a space group of R3c . Meanwhile, it is noted that a small peak marked with a red square in XRD spectra could be assigned to trace amount of impurities of orthorhombic CsPbBr 3 .…”

“…Some researches approved that the RS performances in devices based on all‐inorganic perovskites were more stable as compared with organic perovskites materials. So, promoting all‐inorganic perovskite‐based memory devices would further satisfy requirement in fashionable RS field …”

“…To date, some researchers have been reported that the CsPbBr 3 materials are promising candidates for transient and disposable memory devices . The Cs 4 PbBr 6 , as a typical zero dimensional perovskite structure, has wide applications in transistors, photodetectors, and optoelectronic devices . But only a few efforts have carried out in perovskite Cs 4 PbBr 6 layers as switching insulators to fabricate transient RS memory devices.…”

“…Actually, it could be found that the trace amount of CsPbBr 3 phase that was identical to XRD pattern results is not large. Therefore, the small amount of CsPbBr 3 phase has few effects on the memory devices . Figure b,c shows the atomic force microscope (AFM) topography image and the corresponding 3D surface image of Cs 4 PbBr 6 thin films, respectively.…”

“…On the basis of the aforementioned experimental analysis, the physical RS mechanism of the Au/Cs 4 PbBr 6 /PEDOT:PSS/ITO memory devices could be attributed to the conductive filamentary mode. Some literatures reported that in the perovskite‐based RS memory devices, ions can drift in the dielectric layer during the switching‐on process . On the basis of aforementioned analysis, the Br − ions related to the conductive filaments model were adopted to elucidate the physical mechanism.…”