Fe-Doped LaNiO&lt;SUB&gt;3&lt;/SUB&gt; Thin Films as Electrodes for BiFeO&lt;SUB&gt;3&lt;/SUB&gt; Ferroelectric Thin Films

Xu, Chudong; Lao, Meimei; Xu, Jun; Chen, Ruqi

doi:10.1166/sam.2015.2404

Cited by 2 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Up until this point, the effect of resistance switching has been affirmed in many materials, including polymers [3], metal oxides [4][5][6], polymers [6] and perovskites [7]. Among them, ABO 3 -type inorganic perovskite such as BiFeO 3 [8], ZnSnO 3 [9], CaTiO 3 [10], and SrTiO 3 [11,12] have drawn in broad attention as the capacity media because of their noteworthy resistance switching effects and different functionalities. Nevertheless, fragility and expense of the manufacturing process restrict the wide uses of these ABO 3 -type inorganic perovskites for memory devices.…”

Section: Introductionmentioning

confidence: 99%

A method to improve the performance of all-inorganic halide perovskite CsPbBr₃ memory

Ying

Yao

Xia

et al. 2022

Mater. Res. Express

View full text Add to dashboard Cite

All-inorganic perovskite has been generally used in memristor due to its outstanding characteristics such as superior optical performance, superior stability, tunable and highly effective photoluminescence. We have proved the use of all-inorganic halide perovskite as a medium in memristor. In this paper, the memristor with construction of Au/CsPbBr3/FTO, Au/CsPbBr3/ZnO/FTO and Au/ZnO/CsPbBr3/FTO were manufactured by one-step spin-coating approach to observe representative bipolar resistance switching behaviors in different construction of resistance random access memory devices. Results show that the memristor based on ZnO/CsPbBr3 heterojunction having excellent resistance switching effect with low resetting, setting voltages and and high environmental stability. Moreover, a model of filaments through the CsPbBr3 layer was raised to interpret the resistive switching effect.

show abstract

Section: Introductionmentioning

confidence: 99%

A method to improve the performance of all-inorganic halide perovskite CsPbBr₃ memory

Ying

Yao

Xia

et al. 2022

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

Cai

Lao

et al. 2019

Ceramics International

View full text Add to dashboard Cite

Fe-Doped LaNiO<SUB>3</SUB> Thin Films as Electrodes for BiFeO<SUB>3</SUB> Ferroelectric Thin Films

Cited by 2 publications

References 0 publications

A method to improve the performance of all-inorganic halide perovskite CsPbBr₃ memory

A method to improve the performance of all-inorganic halide perovskite CsPbBr₃ memory

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

Contact Info

Product

Resources

About

Fe-Doped LaNiO<SUB>3</SUB> Thin Films as Electrodes for BiFeO<SUB>3</SUB> Ferroelectric Thin Films

Cited by 2 publications

References 0 publications

A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory

A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

Contact Info

Product

Resources

About

A method to improve the performance of all-inorganic halide perovskite CsPbBr₃ memory

A method to improve the performance of all-inorganic halide perovskite CsPbBr₃ memory