A method to improve the performance of all-inorganic halide perovskite CsPbBr₃ memory

Abstract

All-inorganic perovskite has been generally used in memristor due to its outstanding characteristics such as superior optical performance, superior stability, tunable and highly effective photoluminescence. We have proved the use of all-inorganic halide perovskite as a medium in memristor. In this paper, the memristor with construction of Au/CsPbBr3/FTO, Au/CsPbBr3/ZnO/FTO and Au/ZnO/CsPbBr3/FTO were manufactured by one-step spin-coating approach to observe representative bipolar resistance switching behaviors in different construction of resistance random access memory devices. Results show that the memristor based on ZnO/CsPbBr3 heterojunction having excellent resistance switching effect with low resetting, setting voltages and and high environmental stability. Moreover, a model of filaments through the CsPbBr3 layer was raised to interpret the resistive switching effect.

Perovskite material-based memristors for applications in information processing and artificial intelligence

“…65,66 Therefore, electronic devices based on OHPs have broad application prospects in optical erasure memory, optical genetic synchronization, and optical accelerated learning. [67][68][69][70] Various methods have been used for the preparation of perovskite-type compounds, including the traditional solution method, magnetron sputtering, sol-gel process, [71][72][73] hydrothermal synthesis, 74,75 and high-energy ball milling. 76 Previously, a memristor based on zinc titanium oxide (ZnTiO 3 ) was prepared using solution combustion synthesis described by Akhilesh et al 77 In this work, a device with an Al/ZnTiO 3 /FTO structure exhibited excellent performances with endurance cycles of 10 3 and a retention property up to 10 4 s. Besides, Blagoev et al fabricated LSMO and LSMO/YBCO polycrystalline films on an r-cut Al 2 O 3 substrate by magnetron sputtering, 78 which could exhibit ferromagnetic behavior at room temperature.…”

Cs3Bi2Br9 Halide Perovskite Nanostructure/Polymer Composite Films Resistive Memory

“…Researchers have experimented with a number of techniques to increase the performance of devices, including electrode tuning, doping modification of the dielectric layer, and interface modulation. All of these techniques have some degree of success. − It is common knowledge that the performance of the device is frequently significantly influenced by the interface and that by fine-tuning the interface, we can significantly improve the device’s resistive performance. For instance, Wu et al prepared Ni/ZnO/CsPbBr 3 /FTO devices with metal oxide ZnO encapsulated perovskite CsPbBr 3 , improving the surface roughness of the perovskite film and the interfacial contact with the electrode, preventing the interfacial reaction between perovskite and metal electrode, and increasing the switching ratio (>10 5 ) and retention time (>10 4 s) of the device.…”

First-principles study of electronic properties of two-dimensional metal mixed perovskites solar cell and water resistance performance

“…Conventional bulk hybrid Organic-inorganic perovskites (3D HOIPs) have attracted increasing focus on use in perovskite solar cells (PSCs) because of their excellent optical properties such as optimal band gap for maximal Sun-light absorption, excellent carrier mobility, and efficient separation of electron-hole [1][2][3][4][5][6][7][8][9][10]. It has risen from 3.8% to dramatic 27% within decade for the power conversion efficiency (PCE) (from 2009 to 2022) [11][12][13][14][15].…”