The effects of nitrogen on GaAsP light-emitting diodes grown by hydride vapor phase epitaxy are described. Nitrogen acts as an isoelectronic trap and this localized state makes GaAsP a widely used material for from-yellow-to-red visible light-emitting diodes. The photoluminescence and electroluminescence spectra, brightness, and reliability were investigated systematically in line with the function of nitrogen concentration, from 0 (without nitrogen) to 2.3×1019 cm−3. When the nitrogen concentration reached 2.3×1019 cm−3, the total emission in the photoluminescence spectrum at 4.2 K showed a redshift. The study provides clarification of the effects of nitrogen on the diodes and demonstrates that the characteristics of the diodes strongly depend on the nitrogen concentration.
Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p+/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017 cm−3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.
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