Effects of nitrogen on GaAsP light-emitting diodes

Sato, Tadashige; Imai, Megumi

doi:10.1063/1.1469664

Cited by 3 publications

(3 citation statements)

References 18 publications

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“…Therefore, the effects of gamma rays on materials from candidate manufacturers that are likely to be used in the actual equipment of the DIM system must be confirmed, which will contribute to the design of the shielding. LiCAF is a promising inorganic material for neutron scintillators and lasers and has undergone fundamental and application studies [8,9]. Li-CAF is also an advantageous material to use in the UV wavelength region due to its high Abbe number and thusly its high capability of chromatic aberration correction in the UV region.…”

Section: Gamma Irradiation On Lens Materialsmentioning

confidence: 99%

“…However, its superiority would be lost due to its low transmittance in the UV region in a radiation environment. LiCaAlF 6 glass has a color center of F-center at 262 nm [8], which can be observed in terms of its optical density (absorbance). The optical density per unit length OD (λ) / d [cm −1 ] is calculated from the formula (1), where transmittance is T (λ), reflectance is R (λ), and sample thickness is d (cm).…”

Section: Gamma Irradiation Effects On Licafmentioning

confidence: 99%

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Gamma Ray Irradiation Effects on Optical Elements of ITER Divertor Impurity Monitor

Kitazawa

Oikawa

Ogawa

et al. 2019

Plasma and Fusion Research

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The ITER divertor impurity monitor (DIM) is a diagnostic system that directly observes 200-1000 nm light emissions from nuclear fusion plasma. Because the DIM observes a wide range of light from infrared to ultraviolet using a single optical system, high optical performance, such as spatial resolution and aberration, is required for the DIM optical elements. The DIM must be highly robust against external environmental factors, such as temperature, humidity, vibration, and magnetic field. Components having high radiation resistance must be used because of the high radiation environment in ITER. In this study, DIM optical elements installed in the interspaces and the port cells are investigated because gamma ray irradiation can impact their optical performance. The irradiation experiments were performed at QST's gamma-ray irradiation facilities in Takasaki. The attenuation of transmittance due to gamma irradiation were evaluated for silica, fluorite, and LiCaAlF 6 as the glass material in the spectrometers to be installed in the port cell. The influence of irradiation on silica polka dot beam splitters was found to be negligible; however, the transmittance of high OH concentration fibres for measuring UV light decreased significantly due to irradiation and will thus require countermeasures. The information necessary for proceeding with the ITER DIM design was obtained from these experimental results.

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Section: Gamma Irradiation On Lens Materialsmentioning

confidence: 99%

Section: Gamma Irradiation Effects On Licafmentioning

confidence: 99%

Gamma Ray Irradiation Effects on Optical Elements of ITER Divertor Impurity Monitor

Kitazawa

Oikawa

Ogawa

et al. 2019

Plasma and Fusion Research

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“…Mixed anion heterostructures have been developed for several applications, including solar cells [1,2], infrared emitters [3], and quantum lasers [4]. Molecular beam epitaxy (MBE) plays a vital role in the development of compositionally abrupt interfaces with atomic layer precision.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Phosphorus In-Diffusion and Strain in GaAsP/GaAs Using High-Resolution Transmission Electron Microscopy

Chang

2020

JNanoR

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We report our experiments based on the interfaces of a 5-period superlattice, containing GaAsP(3Å)/GaAs (190Å) heterostructures grown by molecular beam epitaxy (MBE). The atomic arrangement at the interfaces of GaAsP/GaAs is investigated using high resolution transmission electron microscopy (HRTEM). Our results indicate that the superlattice was grown coherently with strained layers. We propose that the atomic arrangement at the interface is GaP, assuming that phosphorus incorporation occurs primarily via substitution due to desorption of arsenic at the surface for substrate temperatures above 500°C. The incorporation of phosphorus has been investigated using fast Fourier transform (FFT) patterns and shows a form of strain distribution near the heterointerface. The FFT patterns of the superlattice reveal that strain distributes mostly near the interface and gradually decreases along the direction of growth. Phosphorus diffused into a GaAs layer changes the lattice constant in the growth direction, which reduces strain in the superlattice.

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Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP

Klar

Heimbrodt

Weiser

et al.

Dilute III-V Nitride Semiconductors and Material Systems

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Effects of nitrogen on GaAsP light-emitting diodes

Cited by 3 publications

References 18 publications

Gamma Ray Irradiation Effects on Optical Elements of ITER Divertor Impurity Monitor

Gamma Ray Irradiation Effects on Optical Elements of ITER Divertor Impurity Monitor

Investigation of Phosphorus In-Diffusion and Strain in GaAsP/GaAs Using High-Resolution Transmission Electron Microscopy

Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP

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