Degradation of Se-Doped GaAs<sub>0.6</sub>P<sub>0.4</sub>Light-Emitting Diodes

Sato, Tadashige; Imai, Megumi

doi:10.1143/jjap.41.490

Cited by 2 publications

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“…depends on the donor elements. 7 The diffusion of interstitial Zn ions under operating forward current causes the generation of nonradiative recombination centers in the diffused nitrogen-free GaAs 0.6 P 0.4 LEDs. 7,8 This model of the diffusion of Zn ions would explain the degradation of the p ϩ / p-grown LEDs.…”

Section: Nitrogen-doped Gaasp Light-emitting Diodes With Junctions Grmentioning

confidence: 99%

“…7 The diffusion of interstitial Zn ions under operating forward current causes the generation of nonradiative recombination centers in the diffused nitrogen-free GaAs 0.6 P 0.4 LEDs. 7,8 This model of the diffusion of Zn ions would explain the degradation of the p ϩ / p-grown LEDs. The concentration of interstitial Zn in the p layers is thought to be too low to show the effect of the carrier concentration on degradation, since the carrier concentration is below 1ϫ10 18 cm Ϫ3 .…”

Section: Nitrogen-doped Gaasp Light-emitting Diodes With Junctions Grmentioning

confidence: 99%

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Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

Sato

Imai

2002

Applied Physics Letters

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Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p+/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017 cm−3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.

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Section: Nitrogen-doped Gaasp Light-emitting Diodes With Junctions Grmentioning

confidence: 99%