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In this paper, Carbon-doped Zinc Oxide (C-ZnO) samples were prepared using the solid-state reaction method. The influence of carbon-doping on the structural and dielectric properties of ZnO samples was studied. The shift in the highest peak position (101) in XRD patterns of carbon-doped samples was observed. The Raman peak at 581[Formula: see text]cm[Formula: see text] in undoped ZnO was shifted and broadened in carbon-doped ZnO samples. The ZnO samples doped with carbon show higher values of dielectric constant ([Formula: see text] at 1[Formula: see text]kHz) compared to pure ZnO([Formula: see text] at 1[Formula: see text]kHz) which was due to increase in native point defects in the samples. The ac conductivity ([Formula: see text]) value of the carbon-doped sample was enhanced by 103 times for ((ZnO)[Formula: see text] C[Formula: see text]) sample.

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