2020
DOI: 10.1016/j.matchemphys.2019.122226
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Effect of hydrogen annealing on structure and dielectric properties of zinc oxide nanoparticles

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Cited by 9 publications
(2 citation statements)
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“…5(b), after hydrogen annealing, N it in the whole energy region was lowered, compared to that of the N 2 -annealed RRAM cell, which can be explained by hydrogen passivation as shown in the schematic structure of Fig. 1 [63], [64]. As a result, in the Zr 3 N 2 RRAM based on the charge trapping/detrapping model, resistance states and the operating voltage was decided by the density of nitride traps, while the decrease of N it results in a reduction of leakage current.…”
Section: Resultsmentioning
confidence: 99%
“…5(b), after hydrogen annealing, N it in the whole energy region was lowered, compared to that of the N 2 -annealed RRAM cell, which can be explained by hydrogen passivation as shown in the schematic structure of Fig. 1 [63], [64]. As a result, in the Zr 3 N 2 RRAM based on the charge trapping/detrapping model, resistance states and the operating voltage was decided by the density of nitride traps, while the decrease of N it results in a reduction of leakage current.…”
Section: Resultsmentioning
confidence: 99%
“…These emergent properties are quite different for their bulk forms have the potential applications in several fields such as engineering, electronics, biomedical, medicine, and environmental areas. [23][24][25][26][27][28][29][30] A variety of methods are used to prepare nanoparticles [31][32][33][34][35][36] which include chemical vapor deposition, spray pyrolysis, sputtering, microemulsion polymerization, mechanical milling and wet chemistry methods.…”
mentioning
confidence: 99%