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We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that the low-voltage radio frequency (RF) biasing of the growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ ≤ 1 · 10 −3 Ω cm). The films prepared with additional RF biasing possess lower free carrier concentration and higher free carrier mobility than the Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the NIR spectral region. Furthermore, these films exhibit good ambient stability, and lower high temperature stability than the AZO films of the same thickness.We also present the characteristics of Cu (

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Cu2ZnSnSe4 p-type semiconductors currently investigated for use in thin film solar cells can be synthesized by firstly depositing a metallic precursor and secondly annealing the precursor in selenium vapor. Differently stacked Cu-Sn-Zn metallic precursors were characterized after a soft annealing at 350°C under nitrogen atmosphere. For the stack where the Sn and Zn were in direct contact with sufficient Cu to form a stable alloy, a bi-layered structure consisting of Cu-Sn on the bottom and Cu-Zn on the top was formed. Contrarily, when Zn was not in direct contact with Cu, the metals diffused to form a stable alloy and the system segregates horizontally, forming a mixed columnar structure. These two types of precursors were selenized under exactly the same conditions to form kesterite absorbers for solar cell devices. Using this approach the improvement from 0.44% power conversion efficiency for the bi-layered precursor to 4.5% for the mixed precursor was achieved.

Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K. To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing. Published by AIP Publishing. [http://dx

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Two alternative chemical etchings (aqueous solution of bromine and bromine methanol solution) have been here tested to replace the KCN etching step in Cu-rich CuInSe2 based solar cells fabrication process. This new oxidative etch aims also at smoothing and thinning the as-grown films. This directly affects the interface between the absorber and the CdS buffer, interface which causes problems for Cu-rich solar cells. We present here the effect of these two alternative etchings on both the absorber surface and the solar cells parameters: whereas the bromine methanol etching destroys the solar cell, the aqueous solution of bromine leads to an improvement of the device through reduced interface and tunneling enhanced recombination.