2015
DOI: 10.1016/j.tsf.2014.10.042
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CuInSe 2 semiconductor formation by laser annealing

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Cited by 10 publications
(3 citation statements)
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“…Optoelectronic improvements, including the first laser-annealed working solar cells, were made by maintaining high selenium overpressure. 3,5,7,8 While the work is far from completed, our results have begun to illuminate the possibilities and limitations in terms of process windows and phenomena for area annealing of CIGSe and CdTe TFPVs. The rise of multi-kilowatt-class direct-diode and fibercoupled lasers will undoubtedly usher in new opportunities for annealing large areas with good lateral uniformity and short process times.…”
Section: 1117/21201609006368 Page 2/3mentioning
confidence: 95%
See 1 more Smart Citation
“…Optoelectronic improvements, including the first laser-annealed working solar cells, were made by maintaining high selenium overpressure. 3,5,7,8 While the work is far from completed, our results have begun to illuminate the possibilities and limitations in terms of process windows and phenomena for area annealing of CIGSe and CdTe TFPVs. The rise of multi-kilowatt-class direct-diode and fibercoupled lasers will undoubtedly usher in new opportunities for annealing large areas with good lateral uniformity and short process times.…”
Section: 1117/21201609006368 Page 2/3mentioning
confidence: 95%
“…In this article, we review some general principles and results from our collaborative work. [1][2][3][4][5][6][7][8][9] For timescales longer than 1ns, heat will flow through the entire thin-film stack, but it may take 100s or more to establish a steady-state 1D temperature profile through a glass substrate. At <1ns timescales, light absorption and thus annealing can be targeted within a thin-film stack.…”
mentioning
confidence: 99%
“…Additionally, we show that additive back contact processes such as deposition of Te or ZnTe layers, which to our knowledge are used, at least coincidentally, in all cells to date exhibiting AM1.5 efficiencies above 17%, do not induce such phase changes. Our study is also potentially applicable to other thin-film material applications where chemical etching is used to modify or change the surface chemistry. …”
Section: Introductionmentioning
confidence: 99%