We describe a versatile bottom-up approach to covalently and rapidly graft hydroxyl terminated poly (2-vinyl pyridine) (P2VP-OH) polymers in 60 seconds that can subsequently be used to fabricate high quality TiO2 films on silicon substrates. A facile strategy based upon room temperature titanium vapor phase infiltration of the grafted P2VP-OH polymer brushes produces TiO2 nanofilms of 2-4 nm thickness. In order to fabricate coherent inorganic films with precise thickness control, it is critical to generate a high-quality polymer brush film i.e. a complete monolayer. Definition of precise and regular polymer monolayers is straightforwardly achieved for polymers which are weakly interacting with one another and the substrate (apart from the reactive terminal group used for grafting). However this is much more challenging for reactive systems. Crucial parameters are explored including molecular weight and solution concentration for grafting dense P2VP-OH monolayers from the liquid phase with very high coverage and uniformity across wafer scale areas. Additionally, we compare the P2VP-OH polymer system with another reactive polymer PMMA-OH and a relatively non-reactive polymer PS-OH, the latter we prove to be extremely effective for surface blocking and deactivation. Our methodology provides new insight into the grafting of polymer brushes and their ability to form dense TiO2 films. We believe the results described herein are important for further expanding the use of reactive and unreactive polymers for fields including area selective deposition, solar cell absorber layers and antimicrobial surface coatings.

Recycling metallic powders used in the additive manufacturing (AM) process is essential for reducing the process cost, manufacturing time, energy consumption, and metallic waste. In this paper, the focus is on pore formation in recycled powder particles of stainless steel 316L during the selective laser melting process. We have introduced the concept of optimizing the powder bed's printing area in order to see the extent of the affected powders during the 3D-printing process. X-ray Computed Tomography (XCT) is used to characterize the pores inside the particles. The results from image processing of the tomography (rendered in 3D format) indicate a broader pore size distribution and a higher pore density in recycled powders compared to their virgin counterparts. To elucidate on this, the Electron Dispersion spectroscopy (EDX) analysis and Synchrotron-based Hard X-ray Photoelectron Spectroscopy (HAXPES) were performed to reveal the chemical composition distribution across the pore area and bulk of the recycled powder particles. Higher concentrations of Fe, Cr, and Ni were recorded on the interior wall of the pore in recycled particles and higher Mn, S and Si concentrations were recorded in the outer layer around the pore area and on the surface of the recycled particle. The pore formation in recycled powder is attributed to out-diffusion of Mn, S and Si to the outer surface as a result of the incident laser heat during the AM process due to higher electron affinity of such metallic elements to oxygenation. HAXPES analysis shows a higher MnO concentration around the pore area which impedes the in-diffusion of other elements into the bulk and thereby helps to creates a void. The inside wall of the pore area (dendrites), has a higher concentration of Fe and Cr oxide. We believe the higher pore density in recycled powders is due, at least in part to composition redistribution, promoted by laser heat during the AM process. Nanoindentation analyses on both virgin and recycled powder particles shows a lower hardness and higher effective modulus in the recycled powder particles attributed to the higher porosity in recycled powders.

The selective deposition of materials on predefined areas on a substrate is of crucial importance for various applications, such as energy harvesting, microelectronic device fabrication, and catalysis. A representative example of area-confined deposition is the selective deposition of a metal film as the interconnect material in multilevel metallization schemes for CMOS technology. This allows the formation of multilevel structures with standard lithographical techniques while minimizing pattern misalignment and overlay and improving the uniformity of the structures across the wafer. In this work, area-selective deposition of Ru by atomic layer deposition (ALD) is investigated using alkoxy siloxane dielectric passivation layers. In this work, a comparison of several silane organic SAM precursors in terms of Ru ALD ASD performance is reported. The importance of the surface areal concentration of the passivation molecules is demonstrated. According to the in situ X-ray photoelectron spectroscopy film characterization, the ALD blocking layers derived from a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) precursor have the ability to polymerize under ALD-compatible temperatures, such as 250 °C, which leads to a significant inhibition of Ru growth up to 400 ALD cycles. At the same time, the DETA layer can be selectively removed from the oxidized Cu surface by rinsing in acetic acid, which allows selective deposition of ca. 14 nm of Ru on Cu with no Ru detected on the DETA-coated surface by RBS. The approach is successfully tested on 50 nm halfpitch patterned SiO 2 /Cu lines.

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In this work we present the results of a Hard X-ray Photoelectron Spectroscopy (HAXPES) study on the creation of metallic copper layers via metal-salt infiltration into a poly-2-vinylpyridine (P2VP) film. Metal salt inclusion is a wet chemistry process which allows for the fabrication of both metal and metal oxide films by means of infiltrating a receptive polymer thin film with metal salt precursors. A copper infiltrated P2VP film was subject to UV/Ozone treatment to form copper oxide and annealed in-vacuo to reduce the film to metallic copper. HAXPES and transmission electron microscope (TEM) measurements were used to study the polymer film before and after metal salt infiltration, along with analysis of the copper oxide created after UV/Ozone treatment. The results show successful infiltration of the metal salt into the polymer film, as well as complete conversion to copper oxide following UV/Ozone treatment and reduction to metallic copper with a subsequent in-situ anneal, which demonstrates the ability of the technique for the creation of several key integrated circuit features.

This work is motivated by the desire to develop a semiconductor device patterning technology based on precursor infiltration into block copolymer materials. Developing an understanding of the preferential infiltration of metal precursors into one of the polymer blocks is of critical importance to advance this patterning approach. In this study, metal salts were used as a means to diffuse metal ions into a poly 2-vinylpyridine (P2vP) polymer brush layer (~4 nm thick) which was deposited by spin coating on a silicon substrate. Thin P2vP films infused with aluminum nitrate and copper nitrate by a wet chemical process were analyzed with angle resolved hard x-ray photoelectron spectroscopy (AR HAXPES). From these photoemission measurements, significant information about the chemical compositional profile of the infiltrated films was obtained. The large sampling depth of HAXPES measurements (20–30 nm) enabled details of the chemical composition of the thin film to be characterized and subsequent angle-resolved HAXPES measurements offered a robust analysis of the interfaces and discrete layers that are present in the films. These measurements displayed evidence of bonding interactions between the elements in the polymer film and the infiltrated salts assisting in the development of an understanding of the infiltration process which needs to be optimized for device fabrication applications. Aluminum nitrate presented more evidence of infiltration into P2vP, while copper nitrate was more predominated at the surfaces into the P2vP.

Thin films of OH terminated poly-2-vinylpyridine (P2VP-OH), a polymer with potential for infiltration mediated thin film deposition, area selective deposition (ASD) and small feature size development via block copolymer (BCP) self-assembly, has been studied with hard X-Ray photoelectron spectroscopy (HAXPES). From the N 1s and C 1s core level spectra, accurate values for the binding energy positions of the species present in the films were obtained, providing clear evidence for signals associated to pyridine bonds. The aromatic ring on the P2VP side chain is clearly identified in the studied core levels. These observations allow for a complete understanding of the chemical environment of the polymer and provide evidence of the potential reactions that can occur with metal diffusion into P2VP. Transmission Electron Microscopy (TEM), Attenuated Total Reflection Infrared Spectroscopy (ATR IR) and Atomic Force Microscopy (AFM) measurements reveal high quality films and this work provides a reference base for this functional material in terms of its utility for ASD, BCP and subsequent atomic layer deposition (ALD) based polymer infiltration processes.

This work identifies the critical factors when developing a polymer brush vapor phase infiltration process, while also demonstrating the use of novel pyridines for area selective purposes.