Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create so-called van der Waals heterostructures (vdWH). 1 One promising attribute of vdWH is the ability to rotate the layers at arbitrary azimuthal angles relative to one another. Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties, including the appearance of superconductivity, 2,3 emergent electronic states, 4-7 and unique optoelectronic behavior. 6-11 For TMD vdWH, twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, i.e. any rearrangement of atoms within the individual layers, has been reported experimentally to date. However, any atomic level reconstruction can be expected to have a significant impact on the band structure and all measured properties, and

An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as transition metal dichalcogenides (TMDs) to form van der Waals heterostructures. In these structures, it is possible to create interlayer excitons (ILEs), spatially indirect, bound electron-hole pairs with the electron in one TMD layer and the hole in an adjacent layer. We are able to clearly resolve two distinct emission peaks separated by 24 meV from an ILE in a MoSe/WSe heterostructure fabricated using state-of-the-art preparation techniques. These peaks have nearly equal intensity, indicating they are of common character, and have opposite circular polarizations when excited with circularly polarized light. Ab initio calculations successfully account for these observations: they show that both emission features originate from excitonic transitions that are indirect in momentum space and are split by spin-orbit coupling. Also, the electron is strongly hybridized between both the MoSe and WSe layers, with significant weight in both layers, contrary to the commonly assumed model. Thus, the transitions are not purely interlayer in character. This work represents a significant advance in our understanding of the static and dynamic properties of TMD heterostructures.

Two-dimensional (2D) materials exhibit many exciting phenomena that make them promising as materials for future electronic, optoelectronic, and mechanical devices. Because of their atomic thinness, interfaces play a dominant role in determining material behavior. In order to observe and exploit the unique properties of these materials, it is therefore vital to obtain clean and repeatable interfaces. However, the conventional mechanical stacking of atomically thin layers typically leads to trapped contaminants and spatially inhomogeneous interfaces, which obscure the true intrinsic behavior. This work presents a simple and generic approach to create clean 2D material interfaces in mechanically stacked structures. The operating principle is to use an AFM tip to controllably squeeze contaminants out from between 2D layers and their substrates, similar to a "squeegee". This approach leads to drastically improved homogeneity and consistency of 2D material interfaces, as demonstrated by AFM topography and significant reduction of photoluminescence line widths. Also, this approach enables emission from interlayer excitons, demonstrating that the technique enhances interlayer coupling in van der Waals heterostructures. The technique enables repeatable observation of intrinsic 2D material properties, which is crucial for the continued development of these promising materials.

Transition-metal dichalcogenides (TMDs) are an exciting class of 2D materials that exhibit many promising electronic and optoelectronic properties with potential for future device applications. The properties of TMDs are expected to be strongly influenced by a variety of defects which result from growth procedures and/or fabrication. Despite the importance of understanding defect-related phenomena, there remains a need for quantitative nanometer-scale characterization of defects over large areas in order to understand the relationship between defects and observed properties, such as photoluminescence (PL) and electrical conductivity. In this work, we present conductive atomic force microscopy measurements which reveal nanometer-scale electronically active defects in chemical vapor deposition-grown WS monolayers with defect density varying from 2.3 × 10 cm to 4.5 × 10 cm. Comparing these defect density measurements with PL measurements across large areas (>20 μm distances) reveals a strong inverse relationship between WS PL intensity and defect density. We propose a model in which the observed electronically active defects serve as nonradiative recombination centers and obtain good agreement between the experiments and model.

We present a paradigm for encoding strain into two-dimensional materials (2DMs) to create and deterministically place single-photon emitters (SPEs) in arbitrary locations with nanometer-scale precision. Our material platform consists of a 2DM placed on top of a deformable polymer film. Upon application of sufficient mechanical stress using an atomic force microscope tip, the 2DM/polymer composite deforms, resulting in formation of highly localized strain fields with excellent control and repeatability. We show that SPEs are created and localized at these nanoindents and exhibit single-photon emission up to 60 K, the highest temperature reported in these materials. This quantum calligraphy allows deterministic placement and real time design of arbitrary patterns of SPEs for facile coupling with photonic waveguides, cavities, and plasmonic structures. In addition to enabling versatile placement of SPEs, these results present a general methodology for imparting strain into 2DM with nanometer-scale precision, providing an invaluable tool for further investigations and future applications of strain engineering of 2DM and 2DM devices.

Van der Waals heterostructures (vdWHs) leverage the characteristics of two-dimensional (2D) material building blocks to create a myriad of structures with unique and desirable properties. Several commonly employed fabrication strategies rely on polymeric stamps to assemble layers of 2D materials into vertical stacks. However, the properties of such heterostructures frequently are degraded by contaminants, typically of unknown composition, trapped between the constituent layers. Such contaminants therefore impede studies of the intrinsic properties of heterostructures and hinder their application. Here, we use the photothermal induced resonance (PTIR) technique to obtain infrared spectra and maps of the contaminants down to a few attomoles and with nanoscale resolution. Heterostructures comprised of WSe 2 , WS 2 , and hBN layers were found to contain significant amounts of polydimethylsiloxane (PDMS) and polycarbonate, corresponding to the stamp materials used in their construction. Additionally, we verify that an atomic force microscope-based "nano-squeegee" technique is an effective method for locally removing contaminants by comparing spectra within as-fabricated and cleaned regions. Having identified the source of the contaminants, we demonstrate that cleaning PDMS stamps with isopropanol or toluene prior to vdWH fabrication reduces PDMS contamination within the structures. The general applicability of the PTIR technique for identifying the sources corrupting vdWHs provides *

We report continuous-wave second harmonic and sum frequency generation from two-dimensional transition metal dichalcogenide monolayers and their heterostructures with pump irradiances several orders of magnitude lower than those of conventional pulsed experiments. The high nonlinear efficiency originates from above-gap excitons in the band nesting regions, as revealed by wavelength-dependent second order optical susceptibilities quantified in four common monolayer transition metal dichalcogenides. Using sum frequency excitation spectroscopy and imaging, we identify and distinguish one- and two-photon resonances in both monolayers and heterobilayers. Data for heterostructures reveal responses from constituent layers accompanied by nonlinear signal correlated with interlayer transitions. We demonstrate spatial mapping of heterogeneous interlayer coupling by sum frequency and second harmonic confocal microscopy on heterobilayer MoSe2/WSe2.

Monolayers of transition-metal dichalcogenides (TMDs) are promising components for flexible optoelectronic devices because of their direct band gap and atomically thin nature. The photoluminescence (PL) from these materials is often strongly suppressed by nonradiative recombination mediated by midgap defect states.Here, we demonstrate up to a 200-fold increase in PL intensity from monolayer MoS 2 synthesized by chemical vapor deposition (CVD) by controlled exposure to laser light in the ambient. This spatially resolved passivation treatment is stable in air and vacuum. Regions unexposed to laser light remain dark in fluorescence despite continuous impingement of ambient gas molecules. A wavelength-dependent study confirms that PL brightening is concomitant with exciton generation in the MoS 2 ; laser light below the optical band gap fails to produce any enhancement in the PL. We highlight the photosensitive nature of the process by successfully brightening with a low-power broadband white light source. We decouple changes in absorption from defect passivation by examining the degree of circularly polarized PL. This measurement, which is independent of exciton generation, confirms that laser brightening reduces the rate of nonradiative recombination in the MoS 2 . A series of gas exposure studies demonstrate a clear correlation between PL brightening and the presence of water. We propose that H 2 O molecules passivate sulfur vacancies in the CVD-grown MoS 2 but require photogenerated excitons to overcome a large adsorption barrier. This work represents an important step in understanding the passivation of CVD-synthesized TMDs and demonstrates the interplay between adsorption and exciton generation.