Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create so-called van der Waals heterostructures (vdWH). 1 One promising attribute of vdWH is the ability to rotate the layers at arbitrary azimuthal angles relative to one another. Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties, including the appearance of superconductivity, 2,3 emergent electronic states, 4-7 and unique optoelectronic behavior. 6-11 For TMD vdWH, twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, i.e. any rearrangement of atoms within the individual layers, has been reported experimentally to date. However, any atomic level reconstruction can be expected to have a significant impact on the band structure and all measured properties, and
We report the creation and manipulation of structural phase boundaries in the single-layer quantum spin Hall insulator 1T'-WSe 2 by means of scanning tunneling microscope tip pulses.We observe the formation of one-dimensional interfaces between topologically non-trivial 1T' domains having different rotational orientations, as well as induced interfaces between
The twist angle between the monolayers in van der Waals heterostructures provides a new degree of freedom in tuning material properties. We compare the optical properties of WSe2 homobilayers with...
Electronic states confined to zero angle grain boundaries in single layer graphene are analyzed using topological band theoretic arguments. We identify a hidden chiral symmetry which supports symmetry protected zero modes in projected bulk gaps. These branches occupy a finite fraction of the interface-projected Brillouin zone and terminate at bulk gap closures, manifesting topological transitions in the occupied manifolds of the bulk systems that are joined at an interface. These features are studied by numerical calculations on a tight binding lattice and by analysis of the geometric phases of the bulk ground states..
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