Mid-infrared integrated quantum photonics is a promising platform for applications in sensing and metrology. However, there are only a few examples of on-chip single-photon sources at these wavelengths. These have limited performances with respect to their C-band counterparts. In this work, we demonstrate a new approach to generate heralded single photons in the mid-infrared on a silicon chip. By using a standard C-band pump, the inter-modal spontaneous four-wave mixing enables the generation of the herald idler at 1259.7 nm and the heralded signal at 2015 nm. The idler photon is easily detected with a common infrared single-photon detector while the signal photon is upconverted to visible before its detection. In this way, we are able to operate a mid-infrared source without the need for mid-infrared detectors and laser sources. By measuring a heralded g (2) of 0.23 ± 0.08, we demonstrate the single-photon behavior of the source as well as the feasibility of multi-photon coincidence measurements beyond 2 μm with our setup. The source exhibits a high-intrinsic heralding efficiency of (59 ± 5)%, a maximum coincidence to accidental ratio of 40.4 ± 0.9, and a generation probability of (0.70 ± 0.10) W −2 .
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a low-loss material platform based on high-refractive index silicon oxynitride (SiON), which offers significant characteristics for linear and non-linear optics applications in a wide range of red/near-infrared wavelengths. The demonstrated propagation loss <1.5 dB/cm for visible wavelengths enables the realization of long and intricate circuitry for photon manipulations, as well as the realization of high quality factor resonators. In addition, the proposed SiON shows a high nonlinear index of 10−19 m2/W, improving the strength of nonlinear effects exploitable for on-chip photon generation schemes.
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a low-loss material platform based on high-refractive index silicon oxynitride (SiON), which offers significant characteristics for linear and non-linear optics applications in a wide range of red/near-infrared wavelengths. The demonstrated propagation loss < 1.5 dB/cm for visible wavelengths enables the realization of long and intricate circuitry for photon manipulations, as well as the realization of high quality factor resonators. In addition, the proposed SiON shows a high nonlinear coefficient of 10 −19 m 2 /W, improving the strength of nonlinear effects exploitable for on-chip photon generation schemes.
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