Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths

Piccoli, Gioele; Sanna, Matteo; Borghi, Massimo; Pavesi, L.; Ghulinyan, Mher

doi:10.1364/ome.463940

Cited by 9 publications

(6 citation statements)

References 44 publications

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“…The characterization of the linear losses and nonlinear coefficient for the devices were already reported in our previous paper [12]. In particular, we have shown good propagation loss of 1.5 dB/cm for oxide cladded waveguides and a nonlinear Kerr coefficient of SiON between 13 and 5 x10^-20 m2/W in the 740 nm to 850 nm spectral range.…”

Section: Measurementssupporting

confidence: 72%

“…In our previous work [12] (Figure 1), we have shown by numerical simulation that it is feasible to engineer a platform with a zero-dispersion-point in the desired near infrared interval, if the SiON waveguides are in direct contact with air. In this paper we demonstrate that it is possible to fabricate such kind of device through a selective removal of the top oxide cladding from the micro-ring resonators, by the means of wet etching and a silicon nitride etch-stop layer.…”

Section: Introductionmentioning

confidence: 99%

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Dispersion engineered SiON ring resonators for integrated photon sources

Piccoli¹,

Ghulinyan²

2023

Integrated Optics: Devices, Materials, and Technologies XXVII

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The interest in integrated photonic processors is growing rapidly, with the perspective of the realization of devices capable to provide single photon qubits for efficient and scalable quantum computation. While the on-chip single photon manipulation is well developed in quantum photonics circuits, the integration of photon generation and photon detection stages on the same chip is currently far from being established. In this work we present a potentially scalable, integrated source of near-infrared photon pairs based on ring resonators, realized with dispersion-engineered silicon oxynitride waveguides. The use of high-index silicon oxynitride as core material gives the possibility to engineer the optical properties of waveguides by adapting the ratio between oxygen and nitrogen gases in the deposition chamber and allows the realization of films with thicknesses over 500nm without the formation of cracks. An efficient photon generation process via nonlinear Four-Wave-Mixing (FWM) in a ring resonator requires a zero group-velocity-dispersion in order to have energy equidistant resonances. Here we show that, while it is almost impossible to achieve such a condition with oxide-cladded SiON waveguides, the zero-dispersion-point in the red and near-infrared wavelengths can be engineered if the waveguides are in direct contact with air. This can be achieved through a selective removal of the top oxide cladding from the ring resonators by the means of wet chemical etching and a silicon nitride etch-stop layer. We show that the realized devices are characterized by a constant Free Spectral Range at the engineered wavelengths and are thus feasible devices for nonlinear photon generation via FWM.

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Section: Measurementssupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Dispersion engineered SiON ring resonators for integrated photon sources

Piccoli¹,

Ghulinyan²

2023

Integrated Optics: Devices, Materials, and Technologies XXVII

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“…As a consequence, we cannot use silicon as the material for the waveguide, being not transparent at this wavelength. Other materials, such as Silicon Nitride (Si 3 N 4 ) [36] and Silicon Oxynitide (SiON), [37] should be used. For our simulation, we consider Si 3 N 4 , which exhibits higher nonlinearity and refractive index with respect to SiON.…”

Section: A3 Generated Spectramentioning

confidence: 99%

2 µm Ghost Spectroscopy with an Integrated Silicon Quantum Photonics Source

Sanna,

Rizzotti,

Signorini

et al. 2023

Adv Quantum Tech

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A ghost spectroscopy measurement with an entangled photon source is demonstrated. The transmission spectrum at the 2 m absorption peak of gaseous carbon dioxide (CO2) is measured in a highly noisy environment. Despite the noise, a high sensitivity is obtained, a value that is larger than the one found for a classical spectroscopy measurement performed in the same conditions. The probe photons are time‐energy correlated photon pairs generated through intermodal spontaneous four‐wave mixing in a silicon waveguide. This observation opens the way to low‐cost on‐chip MIR sensors insensitive to environmental noise.

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“…For example, a variety of SiON, known as Hydex (n=1.7 @ 1550 nm), has been widely used for Kerr-based nonlinear optic applications including optical frequency comb [23], optical neural network [24], and quantum photonics [25]. A slightly higher index SiON (n=1.83 @ 1550 nm) was also proposed in [ 20,26] for Kerr-based applications. In both cases, the SiON platforms have a refractive index close to silicon nitride (n=1.98 @ 1550 nm) instead of silicon oxide (n=1.45 @ 1550nm).…”

Section: Introductionmentioning

confidence: 99%

Brillouin and Kerr nonlinearities of a low-index silicon oxynitride platform

Ye¹,

Klaver²,

Gordillo³

et al. 2023

Preprint

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Nonlinear optical effects including stimulated Brillouin scattering (SBS) and four-wave mixing (FWM) play an important role in microwave photonics, optical frequency combs, and quantum photonics. Harnessing SBS and FWM in a low-loss and versatile integrated platform would open the path to building large-scale Brillouin/Kerr-based photonic integrated circuits. In this letter, we investigate the Brillouin and Kerr properties of a low-index (n=1.513 @ 1550 nm) silicon oxynitride (SiON) platform. We observed, for the first time, backward SBS in SiON waveguides with a Brillouin gain coefficient of 0.3 m −1 W −1 , which can potentially be increased to 0.95 m −1 W −1 by just tailoring the waveguide cross-section. We also performed FWM experiments in SiON rings and obtained the nonlinear parameter γ, of 0.02 m −1 W −1 . Our results point to a low-loss and low-index photonic integrated platform that is both Brillouin and Kerr active.

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Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths

Cited by 9 publications

References 44 publications

Dispersion engineered SiON ring resonators for integrated photon sources

Dispersion engineered SiON ring resonators for integrated photon sources

2 µm Ghost Spectroscopy with an Integrated Silicon Quantum Photonics Source

Brillouin and Kerr nonlinearities of a low-index silicon oxynitride platform

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