The proximity effect in successively developed direct-write electron-beam lithography gratings is measured. The grating relief shapes are obtained from the measured power in several of the gratings' diffraction orders. Describing the proximity effect by a convolution with a double Gaussian point-spread function, we determine the parameters of the point-spread function. The writing part of the point-spread function is found to increase significantly with increasing development time, the background part much less.
Kinoforms manufactured in photoresist by photolithographic techniques using a single, ten-level, grey scale photomask, exposed in a specially designed laser exposure system, are described. Kinoforms designed for uniform as well as for partial Gaussian beam illumination are discussed. The highest measured diffraction efficiency was 55%. Photoresist kinoforms were transferred into quartz substrates by reactive ion etching. The highest measured diffraction efficiency for the resulting all-quartz kinoforms was 53%.
We demonstrate that resist kinoforms can be used for laser micromachining. A 10-level resist kinoform, manufactured by electron-beam lithography, was shown to have a diffraction efficiency of 68%. Nine diffraction-limited holes were simultaneously drilled in 0.10-mm-thick stainless steel. Marking in a silicon wafer is also demonstrated.
It is shown that multilevel SAL 110 resist kinoforms can be developed stepwise. Measurements of the kinoform diffraction pattern, performed between the development steps, permitted correct final developments to be made. No significant relief shape degradation was observed for development times as high as 25 min. The results imply that the electron-beam exposure doses, and hence the exposure time, can be reduced by a factor of 3 compared with doses used currently.
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