Successive development optimization of resist kinoforms manufactured with direct-writing, electron-beam lithography

Abstract

It is shown that multilevel SAL 110 resist kinoforms can be developed stepwise. Measurements of the kinoform diffraction pattern, performed between the development steps, permitted correct final developments to be made. No significant relief shape degradation was observed for development times as high as 25 min. The results imply that the electron-beam exposure doses, and hence the exposure time, can be reduced by a factor of 3 compared with doses used currently.

Characterization of photosensitive hybrid sol-gel glass with high-energy beam-sensitive grey-scale mask in single-step fabrication of blazed gratings

“…In DOEs designs, in order to achieve optimal performance and reduce the undesired background optical system noise, multilevel phase-only DOEs and/or continuous relief structures are required for some applications. The multilevel and continuous relief structures can be fabricated by multiple exposures through a set of binary masks [1], electronbeam direct writing [2], laser-beam direct writing [3,4] and grey-scale masks [5][6][7]. For mass production of cost-effective monolithic DOEs, both binary masks and grey-scale masks are normally considered for replication purposes.…”

A kinoform for the spatial distribution of a gaussian beam at millimeter wavelengths

“…Of course, this will create a perfect kinoform only at the design frequency. If this device is part of a frequency swept quasioptical instrument, then we should expect the zero-order beam to appear as we move away from the design frequency [9]; in fact, any frequency-dependent design characteristic will change as we move in frequency, such as the scale of the diffracted beam pattern or the AR-coating efficiency.…”

Miniature Computer-Tomography Imaging Spectrometer

“…As an alternative to traditional photo-lithography that employs UV light to pattern photo-resist, electron-beam lithography uses a beam of electrons to generate patterns in the resist 46,47 . The primary advantage of this technique is that it can improve on the diffraction limit of light and make features in the nano-meter regime.…”