Abstract. This paper introduces a low cost near-field mapping system. This system scans automatically and dynamically, in the time domain, the magnetic field emitted by integrated circuits during the execution of a repetitive set of instructions. Application of this measurement system is given to an industrial chip designed with a 180nm CMOS process. This application demonstrates the efficiency of the system but also the helpfulness of the results obtained to identify paths followed by the current, enabling to locate the potential IR drop zones.
International audienceThis paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements
International audienceThis abstract presents an electrical model of an SRAM cell exposed to a pulsed Photoelectrical Laser Stimulation (PLS), based on our past model of MOS transistor under laser illumination. The validity of our model is assessed by the very good correlation obtained between measurements and electrical simulation. These simulations are capable to explain some specific points. For example, in theory, a SRAM cell under PLS have four sensitive areas. But in measurements only three areas were revealed. A hypothesis was presented in this paper and confirm by electrical simulation. The specific topology of the cell masks one sensitive area. Therefore the electrical model could be used as a tool of characterization of a CMOS circuits under PLS
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