Current semiconductor technology, the so-called the molecule reaction based semiconductor manufacturing, now faces a very severe standstill due to the drastic increase of gate leakage currents and drain leakage currents. Radical reaction based semiconductor manufacturing has been developed to completely overcome the current standstill by introducing microwave excited high density plasma with very low electron temperatures and without accompanying charge-up damage.The introduction of radical reaction based semiconductor manufacturing has made it possible to fabricate LSI devices on any crystal orientation Si substrate surface as well as (100) Si substrate surfaces, and to eliminate a very severe limitation to the antenna ratio in the circuit layout patterns, which is strictly limited to less than 100–200 in order to obtain a relatively high production yield.
We study the dynamics of a three-dimensional laser bullet propagating inside a nonlinear saturable medium. We show that an increase of the pump parameter destabilizes the bullet and leads to its destruction through oscillations with increasing amplitude. We propose an inhomogeneous and anisotropic external excitation mechanism leading to a stable oscillating bullet. By varying the frequency of the external excitation, a stable quasi-in-phase or quasi-antiphase internal state can be reached.
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