Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

Teramoto, Akinobu; Hamada, T.; Yamamoto, Masahiro; Gaubert, Philippe; Akatsuka, Hiroshi; Nii, Koji; Hirayama, Masaki; Arima, Kenta; Endo, Kazuhiko; Sugawa, Shigetoshi; Ohmi, Tadahiro

doi:10.1109/ted.2007.896372

Cited by 87 publications

(66 citation statements)

References 24 publications

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“…Therefore, high-k materials should be introduced instead of conventional SiO 2 gate insulator. Many institutions have reported so far the Si surface flattening process [17,18,19,20], and MOSFETs with atomically flat interface at Si/gate insulator show higher performances than those with conventional devices [21,22,23,24]. The 1/f noise in MOSFETs with Si/high-k gate stacks has also been reported [25,26].…”

Section: Introductionmentioning

confidence: 96%

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Ohmi

2014

IEICE Electron. Express

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The importance of Si surface flatness on metal-oxide-semiconductor field-effect transistor (MOSFET) characteristics with ultrathin hafnium oxynitride (HfON) high-k gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering was described. The surface roughness of Si substrate was reduced by Ar/4.9%H 2 annealing utilizing conventional rapid thermal annealing (RTA) system. Si surface root-mean-square (RMS) roughness was well controlled by changing the annealing temperature from 700 to 1000°C. Si surface RMS roughness after 1000°C/1 hr annealing was 0.078 nm for Si(100) and 0.082 nm for Si(110), respectively. Clear dependence of electrical characteristics of MOS diodes such as equivalent oxide thickness (EOT) and leakage current on the surface RMS roughness of Si(100) and Si(110) was observed, and the electrical characteristics were remarkably improved by decreasing of surface RMS roughness. The MOSFET characteristics with HfON gate insulator fabricated on Si(100) substrates after flattening process were also improved.

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Section: Introductionmentioning

confidence: 96%

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Ohmi

2014

IEICE Electron. Express

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“…Because mainly of structural characterisation difficulties [1], the Si(110) surface has not been as well studied as the Si(111)(7×7) and Si(001)(2×1) surfaces. However, recently the Si (110) surface has attracted a great deal of interest, due in part because of general attention to the physical properties of the low index silicon surfaces, and also due to the convenience of using this as a substrate surface for fabricating the multi-gate field effect transistor [2][3][4]. It is well known that adsorbed hydrogen has a considerable effect on the Si growth process and that hydrogenation of surfaces in solution as a final step of cleaning is a main technological step to form oxygen-free stable surfaces.…”

Section: Introductionmentioning

confidence: 99%

Ab initio calculations of surface phonons of the hydrogen-terminated Si(110)-(1 × 1) surface

2016

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A first-principles study, using a linear-response approach based on the pseudopotential method and the generalized gradient approximation, has been made to examine the phonon spectrum of the hydrogen-terminated Si (110)- (1×1) surface. The calculated results compare very well with the results determined from a recent high-resolution electron-energy-loss spectroscopy measurement. In particular, the energy locations and polarization characteristics of the H-Si bond bending and H-Si stretching surface phonon modes have been determined and discussed in detail. The zone-centre splitting of the two H-Si stretching surface phonon modes is found to 2.4 meV, which compares very well with the experimental value of 1.9 meV.

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“…(3), η is equal to 1/3 for hole and to 1/2 for electron on Si(100) wafers [9]. Regarding Si (110) wafers, η is generally taken equal to 1/3 for both hole [3,10] and electron [11].…”

Section: Experimental Measurement Of the Mobilitymentioning

confidence: 99%

“…Since, the field-effect transistor has taken several directions and is at the root of various devices such as the metal-oxide-semiconductor FET (MOSFET) [3], dual gate MOSFET [4], junction FET [5], high electron mobility transistor [6], four-gate transistor [7] and so on. Nevertheless, the most important parameter for all these devices is the mobility of the carrier flowing inside the channel.…”

Section: Introductionmentioning

confidence: 99%

Carrier Mobility in Field-Effect Transistors

Gaubert¹,

Teramoto²

2017

Different Types of Field-Effect Transistors - Theory and Applications

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Authors investigate the carrier mobility in field-effect transistors mainly when fabricated on Si(110) wafers. They showed that the methods developed to extract the conduction parameters cannot be implemented for Si(110) p-MOSFETs. Authors then developed a more accurate mobility model able to simulate not only the drivability but also the transconductance for these same devices. The study of the relation between the mobility, channel direction and wafer orientation revealed that the channel direction had a significant impact on the mobility for transistors fabricated on Si(110) wafers, the highest electron and hole mobilites being obtained for a channel along the <100> and <110> directions, respectively. No relations were found for Si(100) wafers. The study of the dependence of the scattering mechanism limiting the mobility in Si(110) n-MOSFETs showed that the Coulomb and surface roughness scattering mechanisms were responsible for the degradation of the mobility when compared to the one on Si(100) wafers. Finally, the measurement of the mobility in an accumulation-mode MOSFETs is not straightforward since a bulk contribution, owing to the SOI layer, is adding to channel current. A methodology has been successfully implemented that led to the experimental verification of the universal behaviour of the mobility in an accumulation layer.

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Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

Cited by 87 publications

References 24 publications

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Ab initio calculations of surface phonons of the hydrogen-terminated Si(110)-(1 × 1) surface

Carrier Mobility in Field-Effect Transistors

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