New era of silicon technologies due to radical reaction based semiconductor manufacturing

Abstract

Current semiconductor technology, the so-called the molecule reaction based semiconductor manufacturing, now faces a very severe standstill due to the drastic increase of gate leakage currents and drain leakage currents. Radical reaction based semiconductor manufacturing has been developed to completely overcome the current standstill by introducing microwave excited high density plasma with very low electron temperatures and without accompanying charge-up damage.The introduction of radical reaction based semiconductor manufacturing has made it possible to fabricate LSI devices on any crystal orientation Si substrate surface as well as (100) Si substrate surfaces, and to eliminate a very severe limitation to the antenna ratio in the circuit layout patterns, which is strictly limited to less than 100–200 in order to obtain a relatively high production yield.

XPS analysis of the terminated‐bonding states at GaN surface after chemical and plasma treatments

“…Regarding the plasma treatment, the SiH 4 plasma treatment was carried out on the GaN sample using the microwave excited high density plasma [20] during 30 seconds. Ar gas was used as the plasma excitation gas.…”

Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(1 0 0) substrate near the interface

“…(3) An oxide film was prepared by the oxidation using oxygen radicals (hereafter referred as oxygen-radical oxidation) at 400°C. Here, oxygen radicals were produced in a microwave-excited high-density Kr(97%)/O 2 (3%) mixture plasma [10,11] oxidation all oxide films were kept in isopropyl alcohol solution, from which O 2 gas were removed completely, immediately after their preparation until their photoelectron spectra were measured. We measured the Si 2p spectra arising from the oxide films at the external photoelectron take-off angles (TOAs) of 10°, 15°, 20°, 30°, 52°, and 85°at the vacuum/SiO 2 interface.…”

High quality gate insulator film formation on SiC using by microwave-excited high-density plasma

“…In this experiment, we used microwaveexcited high-density plasma equipment [4] with process gasses of Kr/O 2 /NO and PECVD using microwave-excited high-density Kr/O 2 /SiH 4 plasma with dual shower plate [3,5] for formation of gate insulator films. After 5-step room temperature cleaning [6], gate insulator films were grown by three methods as follows (Fig.…”

“…It was reported that high temperature NO and N 2 O anneals are effective for reduction of interface trap density [2]. On the other hand, radical reactor based processes can form high quality gate insulator films on silicon surfaces at low temperature [3,4].…”