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For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized. The slow progress within silicon optoelectronics, where electronic and optical functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon. Recently, however, a continuous-wave Raman silicon laser was demonstrated; if an effective modulator could also be realized in silicon, data processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide, and the induced nonlinear coefficient, chi(2) approximately 15 pm V(-1), makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck in modern computers by replacing the electronic bus with a much faster optical alternative.

A photonic-crystal waveguide sensor is presented for biosensing. The sensor is applied for refractive index measurements and detection of protein-concentrations. Concentrations around 10 mug/ml (0.15muMolar) are measured with excellent signal to noise ratio, and a broad, dynamic refractive index sensing range extending from air to high viscous fluids is presented.

Topology optimization is used to design a planar photonic crystal waveguide component resulting in significantly enhanced functionality. Exceptional transmission through a photonic crystal waveguide Z-bend is obtained using this inverse design strategy. The design has been realized in a silicon-on-insulator based photonic crystal waveguide. A large low loss bandwidth of more than 200 nm for the bandgap polarization is experimentally confirmed.

Planar photonic crystal waveguide structures have been modelled using the finite-difference-time-domain method and perfectly matched layers have been employed as boundary conditions. Comprehensive numerical calculations have been performed and compared to experimentally obtained transmission spectra for various photonic crystal waveguides. It is found that within the experimental fabrication tolerances the calculations correctly predict the measured transmission levels and other major transmission features.

We employ a collection scanning near-field optical microscope ͑SNOM͒ to image the propagation of light at telecommunication wavelengths along straight and bent regions of silicon-on-insulator photonic crystal waveguides ͑PCWs͒ formed by removing a single row of holes in the triangular 410-nm-period lattice along the ⌫M direction of the irreducible Brillouin zone. We obtain high quality SNOM images of PCWs excited in the wavelength range of 1520-1570 nm, which indicate good PCW mode confinement and low propagation loss. Using averaged cross sections of the intensity distributions before and after PCW bends, bend loss is evaluated and found to noticeably increase with the increase of the light wavelength from ϳ1 dB at 1520 nm to ϳ6 dB at 1570 nm. We analyze light intensity variations along PCWs measured with the SNOM at different distances from the sample surface. Considering the interference between a quasihomogeneous background field and Bloch harmonics of the PCW mode, we account for spatial frequency spectra of the intensity variations and determine the propagation constant of the PCW mode at 1520 nm. The possibilities and limitations of SNOM imaging for the characterization of PCWs are discussed.

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