We demonstrated a novel two-dimensional photonic crystal (PC) based Symmetric Mach Zehnder type all-optical switch (PC-SMZ) with InAs quantum dots (QDs) acting as a nonlinear phase-shift source. The 600- ?m-long PC-SMZ having integrated wavelength-selective PC-based directional couplers and other PC components exhibited a 15-ps-wide switching-window with 2-ps rise/fall time at a wavelength of 1.3 ?m. Nonlinear optical phase shift in the 500-?m-long straight PC waveguide was also achieved at sufficiently low optical-energy (e.g., ??phase shift at ~100-fJ control-pulse energy) due to the small saturation energy density of the QDs, which is enhanced in the PC waveguide, without using conventional measures such as SOAs with current-injected gain. The results pave the way to novel PC- and QD-based photonic integrated circuits including multiple PC-SMZs and other novel functional devices.
A nanometer-scale site-control technique for individual InAs quantum dots (QDs) has been developed by using scanning tunneling microscope (STM) -assisted nanolithography and self-organizing molecular-beam epitaxy. We find that nanometer-scale deposits can be created on a GaAs surface by applying voltage and current pulses between the surface and a tungsten probe of the STM, and that they act as “nanomasks” on which GaAs does not grow directly. Accordingly, subsequent thin GaAs growth produces GaAs nanoholes above the deposits. By supplying 1.1 ML InAs on this surface, QDs are self-organized at the hole sites, while hardly any undesirable Stranski–Krastanov QDs are formed in the flat surface region. Using this technique with nanometer precision, a QD pair with 45 nm pitch is fabricated.
We have studied the dispersion of ultrafast pulses in a photonic crystal waveguide as a function of optical frequency, in both experiment and theory. With phase-sensitive and time-resolved near-field microscopy, the light was probed inside the waveguide in a non-invasive manner. The effect of dispersion on the shape of the pulses was determined. As the optical frequency decreased, the group velocity decreased. Simultaneously, the measured pulses were broadened during propagation, due to an increase in group velocity dispersion. On top of that, the pulses exhibited a strong asymmetric distortion as the propagation distance increased. The asymmetry increased as the group velocity decreased. The asymmetry of the pulses is caused by a strong increase of higher order dispersion. As the group velocity was reduced to 0.116(9) .c, we found group velocity dispersion of -1.1(3) .10(6) ps(2)/km and third order dispersion of up to 1.1(4) .10(5) ps(3)/km. We have modelled our interferometric measurements and included the full dispersion of the photonic crystal waveguide. Our mathematical model and the experimental findings showed a good correspondence. Our findings show that if the most commonly used slow light regime in photonic crystals is to be exploited, great care has to be taken about higher-order dispersion.
We studied a site-control technique for InAs quantum dots (QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organized molecular-beam epitaxy. In small, shallow holes formed on prepatterned mesa structures by EB writing and Cl2 gas etching, QDs were selectively formed, without any formation on the flat region between the patterned holes. The density of the QDs in each hole was dependent on the hole depth, indicating that atomic steps on the GaAs surfaces act as migration barriers to In adatoms. In an array of holes including 5–6 monolayer steps, a single QD was arranged in each hole.
Straight single-line-defect photonic crystal (PC) waveguides on GaAs slabs with lengths of 1, 4, and 10 mm have been fabricated. By controlling the Al content of a sacrificial AlGaAs clad layer and the wet etching duration, a PC core layer with a very smooth surface was obtained. Atomic force microscope images indicate that the roughness on the top surface is less than 1 nm. An extremely low propagation loss of 0.76 dB/mm for the GaAs-based PC waveguide was achieved.
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