An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near-infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect.
We report a coherent mid-infrared (MIR) source with a combination of broad spectral coverage (6-18 μm), high repetition rate (50 MHz), and high average power (0.5 W). The waveform-stable pulses emerge via intrapulse differencefrequency generation (IPDFG) in a GaSe crystal, driven by a 30-W-average-power train of 32-fs pulses spectrally centered at 2 μm, delivered by a fiber-laser system. Electro-optic sampling (EOS) of the waveform-stable MIR waveforms reveals their single-cycle nature, confirming the excellent phase matching both of IPDFG and of EOS with 2-μm pulses in GaSe.
AbstFaci-Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of few nanosecond that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.
The temperature dependent optical parameters n and k of amorphous silicon deposited by electron beam evaporation were determined at the wavelength of 808 nm. This was achieved by fitting an optical model of the layer system to reflection values of a fs-laser beam. From n(T) and k(T) the absorption of a-Si layers as depending on thickness and temperature were calculated for this diode laser wavelength. By heating the layers to 600 °C the absorption can be increased by a factor of 4 as compared to room temperature, which allows for diode laser crystallization of layers down to 80 nm in thickness.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.