We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.

Optical and transport properties of a series of ultrathin NbN films with different thickness grown on sapphire have been evaluated by means of spectral ellipsometry and dc measurements of superconducting critical parameters. The growth process and thus the nitrogen content have been optimized for each film in the series to achieve the highest superconducting transition temperature, which however increases with the film thickness. Optical and transport measurements agree in slowly increasing disorder while the electron density of states at the Fermi level shows a twofold decrease when the film thickness drops from 14 to 3 nm. Nearinfrared extinction spectra of nanowire gratings from our films are well described by the scattering matrix method that uses optical parameters of nonstructured films and the grating geometry. The technique provides an attractive tool for analyzing various devices for nanophotonics.

We have studied supercurrent-assisted formation of the resistive state in nano-structured Nb and NbN superconducting films after absorption of a single photon. In amorphous narrow NbN strips the probability of the resistive state formation has a pronounced spectral cut-off. The corresponding threshold photon energy decreases with the bias current. Analysis of the experimental data in the framework of the generalized hot-spot model suggests that the quantum yield for near-infrared photons increases faster than the photon energy. Relaxation of the resistive state depends on the photon energy making the phenomenon feasible for the development of energy resolving singlephoton detectors.

We evaluate experimentally the intrinsic detection efficiency (IDE) of superconducting NbN nanowire single-photon detectors in the range of wire thicknesses from 4 to 12 nm. The study is performed in the broad spectral interval between near-ultraviolet (wavelength 400 nm) and near-infrared (wavelength 2000 nm) light with plane waves at normal incidence. For visible light the IDE of the thinnest detectors reaches 70%. We use numerically computed absorptance of the nanowire-structures for the analysis of the experimental data. Variations in the detection efficiency with both the wire thickness and the wavelength evidence the red boundary of the hot-spot photon-detection mechanism. We explain the detection at larger wavelengths invoking thermal excitation of magnetic Pearl vortices over the potential barrier at the edges of the wire.

Abstract. In this paper we intend to give a comprehensive description of the current understanding of the detection mechanism in superconducting nanowire singlephoton detectors. We will review key experimental results related to the detection mechanism, e.g. the variations of the detection probability as a function of bias current, temperature or magnetic field. Commonly used detection models will be introduced and we will analyze their predictions in view of the experimental observations. Although none of the proposed detection models is able to describe all experimental data, it is becoming increasingly clear that vortices are essential for the formation of the initial normal-conducting domain that triggers a detection event.