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We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 degrees C is demonstrated and endurance up to 10(5) cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications

Abstract-A switched-capacitor (SC) neuromorphic system for closed-loop neural coupling in 28 nm CMOS is presented, occupying 600 um by 600 um. It offers 128 input channels (i.e. presynaptic terminals), 8192 synapses and 64 output channels (i.e. neurons). Biologically realistic neuron and synapse dynamics are achieved via a faithful translation of the behavioural equations to SC circuits. As leakage currents significantly affect circuit behaviour at this technology node, dedicated compensation techniques are employed to achieve biological-realtime operation, with faithful reproduction of time constants of several 100 ms at room temperature. Power draw of the overall system is 1.9 mW.

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