We point out that plasmons in doped graphene simultaneously enable low-losses and significant wave localization for frequencies below that of the optical phonon branch ω Oph ≈ 0.2 eV. Large plasmon losses occur in the interband regime (via excitation of electron-hole pairs), which can be pushed towards higher frequencies for higher doping values. For sufficiently large dopings, there is a bandwidth of frequencies from ω Oph up to the interband threshold, where a plasmon decay channel via emission of an optical phonon together with an electron-hole pair is nonegligible. The calculation of losses is performed within the framework of a random-phase approximation and number conserving relaxation-time approximation. The measured DC relaxation-time serves as an input parameter characterizing collisions with impurities, whereas the contribution from optical phonons is estimated from the influence of the electron-phonon coupling on the optical conductivity. Optical properties of plasmons in graphene are in many relevant aspects similar to optical properties of surface plasmons propagating on dielectric-metal interface, which have been drawing a lot of interest lately because of their importance for nanophotonics. Therefore, the fact that plasmons in graphene could have low losses for certain frequencies makes them potentially interesting for nanophotonic applications.

Near-field thermophotovoltaic (TPV) systems with carefully tailored emitter-PV properties show large promise for a new temperature range (600 – 1200K) solid state energy conversion, where conventional thermoelectric (TE) devices cannot operate due to high temperatures and far-field TPV schemes suffer from low efficiency and power density. We present a detailed theoretical study of several different implementations of thermal emitters using plasmonic materials and graphene. We find that optimal improvements over the black body limit are achieved for low bandgap semiconductors and properly matched plasmonic frequencies. For a pure plasmonic emitter, theoretically predicted generated power density of 14 W/cm2 and efficiency of 36% can be achieved at 600K (hot-side), for 0.17eV bandgap (InSb). Developing insightful approximations, we argue that large plasmonic losses can, contrary to intuition, be helpful in enhancing the overall near-field transfer. We discuss and quantify the properties of an optimal near-field photovoltaic (PV) diode. In addition, we study plasmons in graphene and show that doping can be used to tune the plasmonic dispersion relation to match the PV cell bangap. In case of graphene, theoretically predicted generated power density of 6(120) W/cm2 and efficiency of 35(40)% can be achieved at 600(1200)K, for 0.17eV bandgap. With the ability to operate in intermediate temperature range, as well as high efficiency and power density, near-field TPV systems have the potential to complement conventional TE and TPV solid state heat-to-electricity conversion devices.

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It is shown that thermally excited plasmon-polariton modes can strongly mediate, enhance and \emph{tune} the near-field radiation transfer between two closely separated graphene sheets. The dependence of near-field heat exchange on doping and electron relaxation time is analyzed in the near infra-red within the framework of fluctuational electrodynamics. The dominant contribution to heat transfer can be controlled to arise from either interband or intraband processes. We predict maximum transfer at low doping and for plasmons in two graphene sheets in resonance, with orders-of-magnitude enhancement (e.g. $10^2$ to $10^3$ for separations between $0.1\mu m$ to $10nm$) over the Stefan-Boltzmann law, known as the far field limit. Strong, tunable, near-field transfer offers the promise of an externally controllable thermal switch as well as a novel hybrid graphene-graphene thermoelectric/thermophotovoltaic energy conversion platform.Comment: 4 pages, 3 figure

We predict the existence of transverse electric (TE) plasmons in bilayer graphene. We find that their plasmonic properties are much more pronounced in bilayer than in monolayer graphene, in a sense that they can get more localized at frequencies just below ħω = 0.4 eV for adequate doping values. This is a consequence of the perfectly nested bands in bilayer graphene which are separated by ∼ 0.4 eV.