Skyrmions are topologically protected non-collinear magnetic structures. Their stability is ideally suited to carry information in, e.g., racetrack memories. The success of such a memory critically depends on the ability to stabilize and manipulate skyrmions at low magnetic fields. The non-collinear Dzyaloshinskii-Moriya interaction originating from spin-orbit coupling drives skyrmion formation. It competes with Heisenberg exchange and magnetic anisotropy favoring collinear states. Isolated skyrmions in ultra-thin films so far required magnetic fields as high as several Tesla. Here, we show that isolated skyrmions in a monolayer of Co/Ru(0001) can be stabilized down to vanishing fields. Even with the weak spin-orbit coupling of the 4d element Ru, homochiral spin spirals and isolated skyrmions were detected with spin-sensitive scanning tunneling microscopy. Density functional theory calculations explain the stability of the chiral magnetic features by the absence of magnetic anisotropy energy.

One promising route toward encoding information is to utilize the two stable electronic states of a spin crossover molecule. Although this property is clearly manifested in transport across single molecule junctions, evidence linking charge transport across a solid-state device to the molecular film's spin state has thus far remained indirect. To establish this link, we deploy materials-centric and device-centric operando experiments involving X-ray absorption spectroscopy. We find a correlation between the temperature dependencies of the junction resistance and the Fe spin state within the device's [Fe(HB(pz))(NH-phen)] molecular film. We also factually observe that the Fe molecular site mediates charge transport. Our dual operando studies reveal that transport involves a subset of molecules within an electronically heterogeneous spin crossover film. Our work confers an insight that substantially improves the state-of-the-art regarding spin crossover-based devices, thanks to a methodology that can benefit device studies of other next-generation molecular compounds.

Materials science and device studies have, when implemented jointly as "operando" studies, better revealed the causal link between the properties of the device's materials and its operation, with applications ranging from gas sensing to information and energy technologies. Here, as a further step that maximizes this causal link, the paper focuses on the electronic properties of those atoms that drive a device's operation by using it to read out the materials property. It is demonstrated how this method can reveal insight into the operation of a macroscale, industrial-grade microelectronic device on the atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different atomic species and interfaces, is measured while these atoms absorb soft X-rays with synchrotron-grade brilliance. X-ray absorption is found to affect magnetotransport when the photon energy and linear polarization are tuned to excite FeO bonds parallel to the MTJ's interfaces. This explicit link between the device's spintronic performance and these FeO bonds, although predicted, challenges conventional wisdom on their detrimental spintronic impact. The technique opens interdisciplinary possibilities to directly probe the role of different atomic species on device operation, and shall considerably simplify the materials science iterations within device research.

Spin‐polarized charge transfer at the interface between a ferromagnetic (FM) metal and a molecule can lead to ferromagnetic coupling and to a high spin polarization at room temperature. The magnetic properties of these interfaces can not only alter those of the ferromagnet but can also stabilize molecular spin chains with interesting opportunities toward quantum computing. With the aim to enhance an organic spintronic device's functionality, external control over this spin polarization may thus be achieved by altering the ferromagnet/molecule interface's magnetic properties. To do so, the magnetoelectric properties of an underlying ferroelectric/ferromagnetic interface are utilized. Switching the ferroelectric polarization state of a PbZr0.2Ti0.8O3 (PZT) bottom layer within a PZT/Co/FePc‐based (Pc ‐ phthalocyanine) device alters the X‐ray magnetic circular dichroism of the Fe site within the phthalocyanine molecular top layer. Thus, how to electrically alter the magnetic properties of an interface with high spin polarization at room temperature is demonstrated. This expands electrical control over spin‐polarized FM/molecule interfaces, which is first demonstrated using ferroelectric molecules, to all molecular classes.

We present a method combining a scanning tunneling microscope and a pulse generator to achieve unprecedented spatiotemporal resolution for spectroscopy at surfaces. Using the so-called pulsed scanning tunneling spectroscopy (P-STS) we identify the stacking schemes at the surface of graphite with a probe time down to 300 ps while conserving atomic resolution. The technique is simple to implement and requires only increasing the signal bandwidth on the bias side of the tunneling junction. We foresee the P-STS as a highly versatile dynamical probe which could be applied to track in time the variation in the sample local density of states induced by any possible excitation.

We report on an easy method to calibrate the transmission of radio-frequency (rf) voltages to the tunneling junction of a scanning tunneling microscope. The transmission strongly depends on frequency, as the cabling shows frequency dependent damping and the impedance mismatch between the cable and the tunneling junction induces reflections. To first order, the current-voltage characteristic of the junction induces a rf tunneling current of the same frequency as the rf voltage. Omnipresent non-linearities of the current-voltage characteristic of the junction to second order, however, generate an additional rectified DC. A direct comparison between this current and the second derivative of the current-voltage curve allows to determine the rf transmission to the tunneling junction. The transmission data up to 2 GHz were used to compensate the rf damping such that at every frequency a constant amplitude at the tunneling junction could be realized expanding the bandwidth of the experiment from less then 100 MHz to 2 GHz.

We demonstrate quantitative ballistic electron magnetic microscopy (BEMM) imaging of simple model Fe(001) nanostructures. We use in situ nanostencil shadow mask resistless patterning combined with molecular beam epitaxy deposition to prepare under ultra-high vacuum conditions nanostructured epitaxial Fe/Au/Fe/GaAs(001) spin-valves. In this epitaxial system, the magnetization of the bottom Fe/GaAs (001) electrode is parallel to the [110] direction, defining accurately the analysis direction for the BEMM experiments. The large hotelectron magnetoresistance of the Fe/Au/Fe/GaAs(001) epitaxial spin-valve allows us to image various stable magnetic configurations on the as-grown Fe(001) microstructures with a high sensitivity, even for small misalignments of both magnetic electrodes. The angular dependence of the hot-electron magnetocurrent is used to convert magnetization maps calculated by micromagnetic simulations into simulated BEMM images. The calculated BEMM images and magnetization rotation profiles show quantitative agreement with experiments and allow us to investigate the magnetic phase diagram of these model Fe(001) microstructures. Finally, magnetic domain reversals are observed under high current density pulses. This opens the way for further BEMM investigations of current-induced magnetization dynamics.

International audienceThe hot-electron magnetotransport of epitaxial Fe/Au/Fe/GaAs(001) spin-valves is investigated by ballistic-electron magnetic microscopy. A magnetocurrent amplitude larger than 500% is observed at room temperature close to the Schottky barrier energy. Remarkably, this magnetocurrent is not significantly affected by the thickness reduction of ferromagnetic films, down to 5 atomic layers of the Fe(001) top electrode. This rather suggests a dominant interfacial spin-filtering effect. Finally, the magnetocurrent is strongly reduced when the effective mass of the semiconductor collector is increased. These observations are consistent with recent theoretical prediction of k-space spin-filtering effect in epitaxial spin-valves attached to a semiconducting lead