This article discusses the results obtained from an extensive comparison set up between nine different European laboratories using different two-dimensional ͑2D͒ dopant profiling techniques ͑SCM, SSRM, KPFM, SEM, and electron holography͒. This study was done within the framework of a European project ͑HERCULAS͒, which is focused on the improvement of 2D-profiling tools. Different structures ͑staircase calibration samples, bipolar transistor, junctions͒ were used. By comparing the results for the different techniques, more insight is achieved into their strong and weak points and progress is made for each of these techniques concerning sample preparation, dynamic range, junction delineation, modeling, and quantification. Similar results were achieved for similar techniques. However, when comparing the results achieved with different techniques differences are noted.
In this work, we investigate the theoretical and the experimental accuracy limits of the delineation of pn junctions by scanning capacitance microscopy. We compare three different techniques basing both on experimental data and on one-and two-dimensional simulations of scanning capacitance measurements of epitaxial and shallow junctions.
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